Laser-Heated Contact Plug Recrystallization to Remove Voids
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Solution Overview
Problem
Conventional methods for manufacturing semiconductor devices result in voids or seams in contact plugs, leading to surface defects and increased line resistance, degrading device characteristics.
Innovation Solution
A method involving the formation of a substrate with an insulating layer, etching to create openings, forming a contact plug, and applying a metal layer, followed by laser irradiation to heat and recrystallize the metal layer, which indirectly heats the contact plug, removing voids or seams and reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form contact plugs, then the manufacturing process is simple, but voids and seams are generated in the contact plug, resulting in increased line resistance and degraded device characteristics
Solution Approach 1:
A metal layer is formed on the contact plug before laser irradiation to prepare the structure for subsequent void removal. This preliminary action enables the laser treatment to effectively remove voids and seams without directly irradiating the contact plug, thereby improving contact plug quality while managing process complexity
Solution Approach 2:
A metal layer is introduced as an intermediary between the laser and the contact plug. The metal layer absorbs laser energy and converts it to heat, which then indirectly heats the contact plug to remove voids and seams. This intermediary approach enables effective void removal while controlling the complexity of the manufacturing process
2Reliability
If a metal layer is formed and laser irradiation is applied to remove voids, then line resistance is reduced and device characteristics are improved, but the manufacturing process becomes more complex
Solution Approach 1:
The metal layer is formed in advance before laser irradiation, preparing the contact plug structure for void removal. This preliminary formation of the metal layer enables subsequent laser treatment to effectively improve device characteristics by removing voids, while the process complexity is managed through systematic step integration
Solution Approach 2:
Laser irradiation parameters are optimized to control the heating process of the metal layer and contact plug. By adjusting laser power, pulse duration, and scanning speed, the process achieves effective void removal and improved device reliability while managing the complexity of the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively removes voids or seams in contact plugs, resulting in semiconductor devices with lower resistance characteristics and improved performance through recrystallization and grain size increase.
Implementation Method 1
irradiating the metal layer with a laser may include removing a void or a seam in the contact plug by directly heating the metal layer
Implementation Method 2
directly heating the metal layer, resulting in indirectly heating the contact plug
Implementation Method 3
an processed object can be recrystallized during melting and solidifying processes
Implementation Method 4
an processed object can be recrystallized during melting and solidifying processes
Data Source
AI summary
A method of manufacturing a semiconductor device comprises providing a substrate; forming an insulating layer on the substrate; etching the insulating layer to form an opening that exposes the substrate; forming a contact plug in the opening and on the insulating layer; forming a metal layer on the contact plug; and irradiating the metal layer with a laser.