Semiconductor Laser Cooling via Segmented Driving Substrate

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Solution Overview

Problem

Conventional semiconductor laser cooling systems face inefficiencies due to blocked airflow by driving substrates and reduced contact areas between heat sinks and semiconductor lasers, leading to inadequate heat dissipation and shortened device lifespan.

Innovation Solution

A semiconductor laser light source device with a cooler in direct contact with the semiconductor laser and a driving substrate in contact with the cooler, featuring a hollow with arranged fins for enhanced heat transfer, reducing thermal resistance and improving cooling efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a driving substrate with holes is placed between the cooling fan and radiating fins, then the driving substrate can electrically connect semiconductor lasers, but the substrate blocks airflow and reduces cooling efficiency

Engineering Contradiction:
Improveelectrical connectionVSAvoidcooling efficiency
Core Design Contradiction:
Ease of manufactureVSTemperature

Solution Approach 1:

The driving substrate is divided into multiple separate connection elements or traces that are strategically positioned to minimize airflow blockage while maintaining electrical connectivity. This segmentation allows airflow to pass through gaps between the connection elements, reducing the cooling efficiency problem while preserving the electrical connection function.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A thermal interface material or conductive adhesive is introduced as an intermediary between the driving substrate and the radiating fins. This intermediary layer improves thermal transfer efficiency while allowing the driving substrate to maintain its electrical connection function without directly blocking the airflow path to the fins.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If a flexible substrate is embedded in the heat sink to connect semiconductor lasers, then electrical connection is achieved, but the contact area between heat sink and semiconductor laser is reduced

Engineering Contradiction:
Improveelectrical connectionVSAvoidcooling capability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The driving substrate is designed to serve dual functions: electrical connection and thermal management. By integrating thermal pathways directly into the substrate structure and optimizing its thermal conductivity, the design merges the electrical and thermal management functions, eliminating the need for separate flexible substrate connections that would reduce contact area.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The thermal conductivity parameter of the driving substrate is enhanced through material selection or structural modification. By changing the thermal properties of the substrate, it becomes an effective thermal pathway that maintains good contact between the semiconductor laser and heat sink while preserving electrical connection functionality.

Inventive Principle:
Principle #35Parameter changes

3Illumination intensity

If semiconductor lasers operate at high temperatures to maintain high output, then brightness is improved, but element degradation accelerates and lifespan shortens

Engineering Contradiction:
ImprovebrightnessVSAvoidlifespan
Core Design Contradiction:
Illumination intensityVSDuration of action of stationary object

Solution Approach 1:

The cooling system is designed to continuously and efficiently remove heat during semiconductor laser operation. By maintaining continuous active cooling through optimized airflow paths and thermal contact, the system keeps the laser operating temperature stable and low, allowing sustained high brightness output without accelerated degradation.

Inventive Principle:
Principle #20Continuity of useful action

Solution Approach 2:

The operating temperature parameter of the semiconductor laser is actively controlled and maintained at optimal levels through the improved cooling system. By changing and stabilizing the temperature parameter, the laser can operate at high brightness while preventing the thermal degradation that would otherwise shorten its lifespan.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for efficient cooling of semiconductor lasers, reducing thermal resistance and extending their operational lifespan while enabling higher output and longer device usage.

Implementation Method 1

the cooler is placed in contact with a surface of the semiconductor laser... the driving substrate is placed in contact with a surface of the cooler

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

the cooler includes a hollow in which a plurality of fins are arranged

Methodology Applied
Scientific EffectConvection: Convection

Data Source

PatentEP3261197B1Semiconductor laser light source device, semiconductor laser light source system, and image display device
Publication Date: 2021.06.30 MITSUBISHI ELECTRIC CORP
  • EP3261197B1 patent drawingFigure 1
  • EP3261197B1 patent drawingFigure 2A~2C
  • EP3261197B1 patent drawingFigure 3A~3C

AI summary

The object is to provide a technique that allows a semiconductor laser to be efficiently cooled. A semiconductor laser light source device 100 includes: a semiconductor laser 1; a cooler 2 that cools the semiconductor laser 1; and a driving substrate 3 that drives the semiconductor laser 1. The cooler 2 is placed in contact with a surface of the semiconductor laser 1 that is opposite to a light emitting surface of the semiconductor laser 1. Furthermore, the driving substrate 3 is placed in contact with a surface of the cooler 2 that is opposite to a surface of the cooler 2 on which the semiconductor laser 1 is placed,