Laser-Heated Crucible for Faster Ion Implanter Source Gas Generation
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Solution Overview
Problem
In semiconductor manufacturing, existing ion implantation processes require a long time to stably generate a source gas when using an electric heater, which hampers productivity.
Innovation Solution
An ion implanter system utilizing a crucible inside a vacuum chamber, where a solid sample is heated by a laser beam with an output between 0.1 kW and 10 kW and a wavelength between 200 nm and 2000 nm, generating a source gas that is then converted into plasma to produce ions for implantation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an electric heater is used to heat the crucible and generate source gas, then the source gas can be generated, but the time required to stably generate the source gas is long
Solution Approach 1:
The patent replaces the electric heater (electrical heating system) with a laser beam (optical system) for heating the crucible. The laser beam directly irradiates the crucible containing the solid sample, rapidly heating it to vaporize the sample and generate source gas. This substitution of heating mechanism dramatically reduces the time required to achieve stable source gas generation while maintaining the necessary temperature control.
Solution Approach 2:
The patent employs a pulsed laser irradiation method where the laser beam is applied in periodic pulses rather than continuous illumination. This periodic action allows for rapid heating during pulse intervals while enabling cooling between pulses, preventing overheating and sample degradation. The pulsed regime achieves stable source gas generation faster than continuous heating methods.
2Productivity
If the heating temperature is increased to accelerate source gas generation, then the generation speed improves, but the risk of sample degradation or unwanted reactions increases
Solution Approach 1:
The pulsed laser irradiation method enables rapid temperature increases during pulse intervals to accelerate source gas generation, while the intervals between pulses allow for controlled cooling. This periodic heating prevents sustained high temperatures that would cause sample degradation or unwanted chemical reactions, thus maintaining sample integrity while improving generation speed.
Solution Approach 2:
The patent maintains continuous source gas generation through repeated pulsed irradiation cycles. The overlapping of heating and cooling phases ensures that the crucible remains in an optimal temperature range for continuous vaporization without exceeding degradation thresholds. This continuous cyclic action sustains productivity while protecting sample integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces the time required to generate a stable source gas, enhancing the productivity of the ion implantation process by efficiently heating the crucible to temperatures between 100°C and 3000°C, thereby accelerating the ion generation and implantation process.
Implementation Method 1
heating the crucible to a temperature of 100° C. or higher and 3,000° C. or lower by irradiating an outside of the crucible with a laser beam
Implementation Method 2
generating a source gas by vaporizing the solid sample in the internal space of the crucible
Implementation Method 3
converting the source gas into plasma to generate ions
Implementation Method 4
generating ions by converting the source gas into plasma in the internal space of the arc chamber
Data Source
AI summary
An ion implanter includes a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas, a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam, an arc chamber including an internal space for converting the source gas into plasma to generate ions, and in which an ion beam is extracted from the internal space, and a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, and introducing the source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.