Semiconductor Laser Current Path Layout for Low-Inductance Pulsing

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Solution Overview

Problem

Semiconductor laser devices used in LiDAR systems face high inductance component losses due to rapid current changes, which affect their efficiency and performance.

Innovation Solution

A semiconductor laser device is designed with a support member and conductive parts that form a conduction path, including first and second wires with different resistances to separate current paths, reducing inductance and enhancing switching speed and peak current values.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If semiconductor laser devices emit pulsed laser light with narrow pulse widths (not more than several tens of nanoseconds), then the LiDAR measurement precision and speed are improved, but the rate of change of current with time becomes considerably high, which increases the loss due to the inductance component

Engineering Contradiction:
Improvedistance measurement precisionVSAvoidinductance component loss
Core Design Contradiction:
Measurement precisionVSLoss of energy

Solution Approach 1:

The conductive part is divided into multiple sections (first section, second section, third section) with different configurations. The first section is spaced apart from the semiconductor laser element, the second section connects to the switching element, and the third section provides another conduction path. This segmentation allows different sections to optimize for different functions, reducing overall inductance while maintaining measurement precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The conductive part extends in multiple spatial dimensions rather than being a simple planar connection. By creating a three-dimensional conduction path structure with sections at different heights and positions, the design reduces the loop area and optimizes current flow paths, thereby reducing inductance effects while maintaining the narrow pulse width capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If the pulse width is reduced to increase switching speed, then the productivity and response time are improved, but the inductance loss increases due to higher di/dt

Engineering Contradiction:
Improveswitching speedVSAvoidinductance component loss
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

Different sections of the conductive part have different local configurations optimized for their specific functions. The first section is spaced apart to reduce inductance, the second section is positioned to optimize switching element connection, and the third section provides additional conduction paths. This local optimization allows the system to achieve high switching speed while minimizing inductance losses in each specific region.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design reduces inductance components, allowing for faster switching and higher output with smaller pulse widths, suitable for LiDAR applications by minimizing electrical losses and optimizing current flow.

Implementation Method 1

a support member including a conductive part that forms a conduction path to the switching element and the semiconductor laser element

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS12080990B2Semiconductor laser device
Publication Date: 2024.09.03 ROHM CO LTD
  • US12080990B2 patent drawing
  • US12080990B2 patent drawing
  • US12080990B2 patent drawing

AI summary

Semiconductor laser device A1 includes semiconductor laser element 4, switching element 5 having gate electrode 52, source electrode 53 and drain electrode 54, and support member 1 having conductive part 3 that forms a conduction path to switching element 5 and semiconductor laser element 4 and supports semiconductor laser element 4 and switching element 5. Conductive part 3 has front surface first section 311 spaced apart from semiconductor laser element 4. Semiconductor laser device A1 includes at least one first wire 71 connected to source electrode 53 of switching element 5 and semiconductor laser element 4 and also at least one second wire 72 connected to source electrode 53 of switching element 5 and front surface first section 311 of conductive part 3. Such an arrangement reduces the inductance component of semiconductor laser device A1.