Laser Detachment of Semiconductor Dies from Wafer Carrier
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Solution Overview
Problem
The conventional process of separating semiconductor devices from a wafer carrier is time-consuming and inefficient, particularly in identifying and removing defective dies, which bottlenecks the overall production process.
Innovation Solution
A method using a carbon dioxide snow jet or laser process to detach semiconductor dies from a wafer frame with an adhesive foil, allowing for rapid and contamination-free separation of good dies while leaving no residues, and optionally using a relamination process to attach and detach dies for efficient sorting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional mechanical and chemical singulation methods are used to separate semiconductor devices from the wafer carrier, then the devices can be physically separated into individual dies, but the process becomes time-consuming and creates a bottleneck for overall production
Solution Approach 1:
The patent replaces conventional mechanical and chemical singulation methods with a laser-based process. The laser beam selectively removes adhesive material to detach individual dies or groups of dies from the wafer carrier, eliminating the time-consuming mechanical cutting and chemical treatment steps while maintaining precise separation capability.
Solution Approach 2:
The patent changes the physical state and properties of the adhesive material through laser heating. By controlling laser parameters such as power, pulse duration, and scanning speed, the adhesive undergoes localized melting or vaporization, enabling rapid and clean detachment of dies without affecting surrounding areas or requiring subsequent mechanical processing.
2Manufacturing precision
If conventional singulation processes are used, then semiconductor devices can be separated, but the process requires over an hour to handle thousands of dies
Solution Approach 1:
The laser-based detachment process eliminates multiple sequential mechanical and chemical steps required in conventional singulation. The laser beam can rapidly scan across the wafer surface, selectively removing adhesive in a continuous process that handles thousands of dies in minutes rather than hours, while maintaining precise control over separation locations.
Solution Approach 2:
The laser process enables continuous operation where the laser beam continuously scans and detaches dies as it moves across the wafer surface. This eliminates the stop-start nature of conventional mechanical cutting and chemical treatment, maintaining productive action throughout the entire processing cycle and dramatically reducing total processing time.
3Ease of operation
If conventional mechanical separation methods are used, then dies can be detached from the frame, but adhesive residues may remain on the dies
Solution Approach 1:
The laser process replaces mechanical scraping or chemical etching methods with optical energy-based adhesive removal. The laser beam selectively vaporizes or melts the adhesive material, causing it to evaporate or be ejected as vapor rather than leaving behind mechanical debris or chemical residues on the die surfaces.
Solution Approach 2:
The laser process converts the potentially harmful adhesive material into a beneficial vapor phase. By heating the adhesive to its vaporization or decomposition temperature, the adhesive is transformed from a contaminating residue into a gaseous state that can be easily removed from the processing area, leaving clean die surfaces without requiring additional cleaning steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces the time required to process semiconductor dies, enabling the handling of thousands of dies in under 15 minutes, compared to over an hour with conventional methods, while maintaining die integrity and environmental safety.
Implementation Method 1
The plurality of semiconductor devices is removed from the frame with the adhesive foil using a carbon dioxide snow jet
Implementation Method 2
Using a laser process, the first dies are detached from the frame with the adhesive foil without removing the remaining dies of the plurality of dies
Data Source
AI summary
In accordance with an embodiment of the present invention, a semiconductor device is manufactured by arranging a plurality of semiconductor devices on a frame with an adhesive foil. The plurality of semiconductor devices is attached to the adhesive foil. The plurality of semiconductor devices is removed from the frame with the adhesive foil using a carbon dioxide snow jet and/or a laser process.