Laser Stealth Dicing Crack Meandering Suppression
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Solution Overview
Problem
The existing methods for manufacturing semiconductor light-emitting elements using laser stealth dicing often result in meandering cracks, which compromise the fracture strength and lead to unintended breakage and chipping during the singulation process.
Innovation Solution
A method involving a laser beam irradiation process with specific scanning pitches and outputs to form modified regions within the substrate, including first, second, and third modified regions, which suppresses crack meandering while maintaining high fracture strength, allowing for effective singulation of light-emitting elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single laser beam scanning process is used to form modified regions in the substrate, then the singulation process can be completed, but crack meandering occurs which reduces fracture strength
Solution Approach 1:
The laser beam scanning process is divided into three distinct stages with different irradiation pitches and output settings. First modified regions are formed with a first irradiation pitch, then second modified regions are formed with a second irradiation pitch (wider than the first), and finally third modified regions are formed with a third irradiation pitch (narrower than the second) at higher output. This segmentation of the scanning process prevents crack meandering while maintaining singulation efficiency.
Solution Approach 2:
The first modified regions are formed in advance before the second and third modified regions. This preliminary action creates a foundation structure that guides subsequent crack propagation, ensuring that cracks follow the intended path through the second and third modified regions without meandering, thereby maintaining high fracture strength during singulation.
2Reliability
If laser beam output is increased to ensure complete singulation, then separation is achieved, but crack meandering increases reducing structural integrity
Solution Approach 1:
Different regions of the substrate are subjected to different laser irradiation conditions. The first modified regions use one set of parameters, the second modified regions use different parameters (wider pitch), and the third modified regions use yet different parameters (narrower pitch with higher output). This local differentiation ensures that each region contributes specifically to guiding cracks along the intended path, achieving complete separation without meandering and maintaining structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses crack meandering and maintains high fracture strength during the laser beam irradiation process, reducing unintended breakage and chipping, and enhancing productivity in the manufacturing of light-emitting elements.
Implementation Method 1
irradiating a laser beam into an interior of the substrate from a second surface side of the substrate, which comprises: forming a plurality of first modified regions in the interior of the substrate by scanning the laser beam
Data Source
AI summary
A method for manufacturing a light-emitting element includes: providing a wafer comprising: a substrate having a first surface and a second surface, and a semiconductor structure provided at the first surface; irradiating a laser beam into an interior of the substrate from a second surface side of the substrate, which comprises: forming a plurality of first modified regions, a plurality of second modified regions, and a plurality of third modified regions in the interior of the substrate; and subsequently, separating the wafer into a plurality of light-emitting elements.