Laser Die Transfer Carrier With Thermal Barrier Support Layer
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Solution Overview
Problem
Conventional carriers for laser die transfer of semiconductor dies require high fluence to release the dies due to heat absorption by the primary support layer, which acts as a heatsink, reducing energy efficiency and increasing costs.
Innovation Solution
A carrier with an optically transparent secondary support layer having a different material composition than the primary support layer, which reduces heat flow away from the primary support layer during laser die transfer, thereby minimizing the fluence required for die release.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an optically transparent primary support layer is used to support the wafer, then the wafer can be properly supported and positioned, but the primary support layer absorbs heat and acts as a heatsink, requiring higher fluence for die release
Solution Approach 1:
A secondary support layer is introduced as an intermediary between the primary support layer and the dynamic release layer. This secondary layer has lower thermal conductivity than the primary support layer, acting as a thermal barrier that prevents heat from being conducted away from the dynamic release layer during laser irradiation, thereby reducing the fluence required for die release while maintaining wafer support stability.
Solution Approach 2:
The carrier employs a composite structure consisting of two different support layers with distinct thermal properties. The primary support layer provides mechanical strength and stability, while the secondary support layer provides thermal insulation. This composite material approach allows the system to simultaneously achieve reliable wafer support and reduced energy consumption for die release.
2Stability of the object's composition
If the primary support layer absorbs heat, then structural stability is maintained, but energy efficiency decreases due to heat loss away from the dynamic release layer
Solution Approach 1:
The secondary support layer serves as a thermal intermediary that blocks heat flow from the dynamic release layer to the primary support layer. This prevents energy loss while allowing the primary support layer to maintain its structural stability function.
Solution Approach 2:
The carrier structure is designed with spatially varying thermal properties: the secondary support layer positioned adjacent to the dynamic release layer has low thermal conductivity to prevent heat loss, while the primary support layer maintains its inherent structural stability. Each layer performs its specific function locally without compromising the other.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a secondary support layer with a different material composition reduces the fluence required for die release by more than ten times compared to conventional carriers, enhancing energy efficiency and cost-effectiveness.
Implementation Method 1
The secondary support layer has a material composition different from the first material for reducing a flow of heat away from the primary support layer during the laser die transfer process
Implementation Method 2
when a region of the dynamic release layer directly adjacent to said one or more semiconductor dies is illuminated using laser light
Implementation Method 3
For the dynamic release layer to release the semiconductor dies, sufficient energy must be provided thereto via the laser
Data Source
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AI summary
The present disclosure relates to a carrier for laser die transfer of semiconductor dies and to a wafer and a pick-and-place apparatus comprising the same. The carrier comprises an optically transparent secondary support layer, an optically transparent primary support layer attached to the secondary support layer, said primary support layer comprising one or more regions of an optically transparent first material, and a dynamic release layer attached to the primary support layer, wherein the dynamic release layer contacts the one or more regions of a first material. The dynamic release layer is configured to be coupled to a plurality of semiconductor dies, and to release one or more semiconductor dies among said plurality of said semiconductor dies when a region of the dynamic release layer directly adjacent to said one or more semiconductor dies is illuminated using laser light. The secondary support layer has a material composition different from the first material for reducing a flow of heat away from the primary support layer during the laser die transfer process.