Laser Diode Chip with Integrated Heater for Wavelength Stability

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Solution Overview

Problem

Laser diode chips exhibit temperature-dependent emission wavelengths, leading to instability, especially in applications where temperature control is not feasible, causing issues with spectral filtering and signal-to-noise ratio in metrology applications.

Innovation Solution

A laser diode chip design incorporating a heating element, preferably a conductor track made from the same material as the p-contact, is integrated to allow targeted heating of the active layer, ensuring stable emission wavelengths by controlling temperature through electrical energy conversion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If a temperature control system is used to stabilize emission wavelength, then wavelength stability is improved, but heating power requirements and system complexity increase

Engineering Contradiction:
Improveemission wavelength stabilityVSAvoidheating power
Core Design Contradiction:
Stability of the object's compositionVSUse of energy by stationary object

Solution Approach 1:

The patent divides the temperature control system into two independent parts: a heating element integrated directly on the laser diode chip for localized temperature control, and a separate temperature control unit that regulates the heating element. This segmentation allows precise temperature stabilization with minimal heating power while maintaining wavelength stability.

Inventive Principle:
Principle #1Segmentation

2Stability of the object's composition

If a temperature control system is used to stabilize emission wavelength, then wavelength stability is improved, but device complexity increases

Engineering Contradiction:
Improveemission wavelength stabilityVSAvoidtemperature control system complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The heating element is merged with the laser diode chip structure, being formed from the same metal layer that serves as the p-contact. This integration eliminates the need for separate heating component mounting and reduces system complexity while achieving effective localized temperature control for wavelength stabilization.

Inventive Principle:
Principle #5Merging (Combining)

3Adaptability or versatility

If the heating element is formed from a separate metal layer, then manufacturing flexibility is improved, but manufacturing effort and complexity increase

Engineering Contradiction:
Improveheating element design flexibilityVSAvoidmanufacturing effort
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The metal layer serving as the p-contact is given dual functionality: it provides both electrical contact and heating element functions. By patterning specific regions of this multi-functional layer, the invention achieves heating capability without adding manufacturing steps, thereby reducing manufacturing effort while maintaining design flexibility.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides stable emission wavelengths with low heating power requirements, enabling efficient and agile temperature control, reducing parasitic heat paths and manufacturing effort, and maintaining performance comparable to chips without heating elements.

Implementation Method 1

A laser diode chip design incorporating a heating element, preferably a conductor track made from the same material as the p-contact, is integrated to allow targeted heating of the active layer, ensuring stable emission wavelengths by controlling temperature through electrical energy conversion.

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS12080995B2Laser diode chip
Publication Date: 2024.09.03 AMS OSRAM INT GMBH
  • US12080995B2 patent drawing
  • US12080995B2 patent drawing
  • US12080995B2 patent drawing

AI summary

A laser diode chip is described, comprising including:an n-type semiconductor region, a p-type semiconductor region, and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, an n-type contact and a p-type contact,at least one heating element arranged on a side of the laser diode chip facing the p-type semiconductor region, the heating element functioning as a resistance heater, andat least one metallic seed layer, wherein the heating element comprises a part of the seed layer, and wherein the p-type contact is arranged on a further part of the seed layer.