Laser Diode Ridge Structure With Recessed Facets for Low Leakage

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Solution Overview

Problem

Existing optoelectronic components, such as laser diodes, face issues with dislocation formation and leakage currents due to the breaking of side surfaces during the production process, which affects the quality and efficiency of electromagnetic radiation emission.

Innovation Solution

The introduction of recesses on the side surfaces of the optoelectronic component's layer structure, specifically a first recess extending between the first and third side surfaces and a second recess extending into the first recess, reduces dislocation formation and leakage currents by guiding the breaking process and applying a passivation layer to the recessed areas.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the side surfaces are broken during production, then the component can be manufactured, but dislocations and transverse facets form on the side surfaces

Engineering Contradiction:
Improveproduction processVSAvoidside surface quality
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent introduces recesses into the side surfaces before the breaking process. These pre-formed recesses serve as stress relief zones that guide the breaking process and prevent dislocation formation. By preparing the side surface structure in advance, the harmful effects of breaking are controlled and minimized.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent converts the harmful breaking process into a beneficial shaping process. By intentionally introducing recesses that guide the break, the previously harmful dislocations and transverse facets are eliminated, and the breaking process becomes a controlled method for creating the desired side surface geometry with reduced defects.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Reliability

If p-down mounting is used to reduce leakage current, then current flow is improved, but dislocation formation occurs during breaking

Engineering Contradiction:
Improveleakage current reductionVSAvoidside surface integrity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The recesses are introduced before the breaking and mounting processes. This preliminary structuring of the side surfaces ensures that when p-down mounting is performed, the breaking occurs in a controlled manner along the recess boundaries, preventing dislocation formation while maintaining the low leakage current path provided by the p-down configuration.

Inventive Principle:
Principle #10Preliminary action

3Device complexity

If traditional breaking methods are used, then production is simple, but dislocations and transverse facets are formed

Engineering Contradiction:
ImprovestructureVSAvoidside surface quality
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent segments the side surface by introducing recesses that divide the continuous side surface into distinct regions. This segmentation creates controlled weak points that guide the breaking process, allowing the break to occur along predefined paths rather than creating random dislocations across the entire side surface.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentEP4142074B1Optoelectronic component
Publication Date: 2024.11.20 OSRAM OPTO SEMICON GMBH & CO OHG
  • EP4142074B1 patent drawingFigure 1
  • EP4142074B1 patent drawingFigure 2
  • EP4142074B1 patent drawingFigure 3

AI summary

The invention relates to an optoelectronic component with a layer structure (2) having an active zone (9) for generating electromagnetic radiation, wherein the active zone (9) is arranged in a plane, wherein the layer structure (2) has a top surface (7) and four side surfaces (3, 4, 5, 6), wherein the first and third side surfaces (1, 3) are arranged opposite each other, wherein the second and fourth side surfaces (4, 5) are arranged opposite each other, wherein a strip-shaped ridge structure (8) is arranged on the top surface (7) of the layer structure (2), wherein the ridge structure (8) extends between the first side surface (3) and the third side surface (5), wherein the first side surface (3) represents a radiation surface for electromagnetic radiation, wherein a first recess (11) is provided laterally next to the ridge structure (8) in the top surface (7) of the layer structure (2),wherein the first recess (11) extends over the entire length of the laser diode (1) from the first to the third side surface (3, 5) along the second side surface (4), wherein in the region of the first recess (11) the second side surface (4) has laterally recessed wall surfaces (50, 51), wherein a second recess (12) is laterally incorporated into the first recess (11) and into the recessed wall surfaces (50, 51) of the second side surface (4), wherein the second recess (12) is incorporated into the top surface (7) of the layer structure (2), wherein the second recess (12) extends along the second side surface (4, 50, 51), and wherein the second recess (12) is formed spaced apart from the first side surface (3) and spaced apart from the third side surface (5).