Surface-Emitting Laser Diode Epitaxy With a Van Der Waals Release Layer
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Solution Overview
Problem
Current methods for producing surface-emitting semiconductor laser diodes face challenges in achieving high-quality epitaxial semiconductor material with easy detachment from growth substrates, particularly on large diameter wafers, which affects cost-effectiveness and reduces the yield of high-quality semiconductor chips.
Innovation Solution
A method involving a growth substrate with a mask layer and a quasi-two-dimensional intermediate layer, allowing epitaxial growth of semiconductor layers with weak Van der Waals bonding, enabling easy mechanical detachment and reducing stress and defects, using techniques like metal-organic gas phase epitaxy on sapphire or gallium nitride wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional epitaxial growth methods are used on large diameter wafers, then production cost is reduced, but the quality of epitaxial semiconductor material deteriorates and detachment from growth substrate becomes difficult
Solution Approach 1:
A quasi-two-dimensional intermediate layer (such as hexagonal boron nitride or graphene) is introduced between the growth substrate and the epitaxial semiconductor layer sequence. This intermediate layer acts as a mediator that enables easy mechanical detachment while maintaining high-quality epitaxial growth on large diameter wafers, resolving the contradiction between production cost and material quality.
2Ease of manufacture
If conventional epitaxial growth methods are used on large diameter wafers, then production cost is reduced, but detachment from growth substrate becomes difficult
Solution Approach 1:
The quasi-two-dimensional intermediate layer with weak Van der Waals bonding serves as a mediator that facilitates easy mechanical detachment of the semiconductor chip from the growth substrate. This intermediate layer can be easily peeled off, allowing cost-effective production on large diameter wafers without compromising ease of operation.
Solution Approach 2:
The bonding strength between the intermediate layer and the growth substrate is deliberately kept weak through Van der Waals forces, while the bonding between the intermediate layer and the epitaxial semiconductor layer is strong. This parameter change in bonding strength enables easy detachment while maintaining production efficiency.
3Device complexity
If direct epitaxial growth is performed on the growth substrate, then manufacturing process is simplified, but stress and defects in the semiconductor material increase
Solution Approach 1:
The quasi-two-dimensional intermediate layer acts as a buffer between the growth substrate and the epitaxial semiconductor layer sequence, reducing stress and preventing defects during growth. This mediator layer maintains manufacturing process simplicity while significantly improving material reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of high-quality surface-emitting semiconductor laser diodes with reduced defects and stress, allowing for cost-effective production on large diameter wafers, with the potential for longer wavelength emission and reuse of substrates, thus improving the efficiency and yield of semiconductor chip production.
Implementation Method 1
These layers of atoms or molecules are weakly bonded together, for example, via van der Waals forces
Implementation Method 2
The first intermediate layer can be applied, for example, by gas phase epitaxy, in particular metal-organic gas phase epitaxy
Implementation Method 3
For example, the mask layer can be deposited by chemical vapor deposition
Data Source
AI summary
The invention relates to a method for producing a plurality of surface-emitting semiconductor laser diodes, including the following steps:—providing a growth substrate,—applying a mask layer with a plurality of openings onto the growth substrate, so that regions of the growth substrate are exposed through the openings,—applying a first intermediate layer at least onto the exposed regions of the growth substrate, the first intermediate layer having a quasi two-dimensional material, and—epitaxial growing of an epitaxial semiconductor layer sequence on the first intermediate layer, wherein the epitaxial semiconductor layer sequence has an active layer for generating electromagnetic radiation.