Resonant Pulsed Laser Diode Driver for Low-Voltage Nanosecond Pulses
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Solution Overview
Problem
Conventional pulsed laser diode driver circuits face challenges in generating short pulse widths due to parasitic inductances, requiring high source voltages and often using expensive GaN technology, which is difficult to integrate with Silicon-based architectures.
Innovation Solution
The proposed pulsed laser diode driver incorporates a tunable resonant circuit with a discrete inductor and bypass capacitor, allowing for the generation of high-current pulses using a low input voltage, thereby enabling integration with Silicon-based switches and eliminating the need for GaN technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of moving object
If high source voltage (greater than 40V-100V) is used to overcome parasitic inductances, then pulse width can be reduced to desired level, but device complexity and cost increase due to requiring GaN technology
Solution Approach 1:
The patent changes the voltage parameter from high (40V-100V) to low (below 20V) by introducing a resonant circuit that generates voltage amplification. The resonant circuit uses an inductor and capacitor to create a resonant frequency that amplifies the voltage across the laser diode, allowing short pulse widths to be achieved without requiring high source voltage and complex GaN technology.
Solution Approach 2:
The patent applies the principle of resonance by creating an oscillating electromagnetic field in the resonant circuit. The inductor and capacitor form a resonant tank circuit that oscillates at a specific frequency, creating voltage amplification similar to mechanical resonance. This oscillation allows the generation of high peak voltages across the laser diode during the pulse duration without requiring a high DC source voltage.
2Duration of action of moving object
If high source voltage (greater than 40V-100V) is used to overcome parasitic inductances, then pulse width can be reduced to desired level, but manufacturing cost increases due to expensive GaN technology
Solution Approach 1:
The patent changes the voltage parameter from high (40V-100V) to low (below 20V) by introducing a resonant circuit that generates voltage amplification. The resonant circuit uses an inductor and capacitor to create a resonant frequency that amplifies the voltage across the laser diode, allowing short pulse widths to be achieved without requiring high source voltage and complex GaN technology.
Solution Approach 2:
The patent replaces expensive GaN switches with standard Silicon-based switches that operate at lower voltages. The resonant circuit components (inductor and capacitor) are simple, inexpensive passive components that can be easily manufactured and integrated, significantly reducing the overall manufacturing cost compared to GaN-based solutions.
3Duration of action of moving object
If GaN technology is used to withstand high voltages, then desired pulse width can be achieved, but integration with Silicon-based architectures becomes difficult
Solution Approach 1:
The patent changes the voltage parameter from high (40V-100V) to low (below 20V) by introducing a resonant circuit that generates voltage amplification. The resonant circuit uses an inductor and capacitor to create a resonant frequency that amplifies the voltage across the laser diode, allowing short pulse widths to be achieved without requiring high source voltage and complex GaN technology.
Solution Approach 2:
The patent uses a resonant circuit to create a voltage amplification effect that copies or replicates the high-voltage performance of GaN switches using standard Silicon-based components. The resonant tank circuit generates the necessary voltage amplification through electromagnetic resonance, allowing Silicon switches to achieve the same functional result as expensive GaN technology.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for the generation of high-current pulses with pulse widths of 1-5 ns using a low input voltage, improving integration and reducing costs, while maintaining efficient power delivery and tunable parameters.
Implementation Method 1
The inductor and the bypass capacitor form a resonant circuit that generates a resonant waveform having a peak voltage greater than the DC input voltage
Data Source
AI summary
A pulsed laser diode driver includes an inductor having a first terminal configured to receive a source voltage. A source capacitor has a first terminal connected to the first terminal of the inductor to provide the source voltage. A bypass switch has a drain node connected to a second terminal of the inductor and to a first terminal of a bypass capacitor. A laser diode switch has a drain node connected to the second terminal of the inductor. A laser diode has an anode connected to a source node of the laser diode switch and a cathode connected to a bias voltage node. The laser diode switch and the bypass switch control a current flow through the inductor to produce a high-current pulse through the laser diode, the high-current pulse corresponding to a peak current of a resonant waveform developed at the anode of the laser diode.