Laser Donor Transfer Clustering for TSV Filling
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Solution Overview
Problem
In the chip manufacturing process, existing technologies face challenges in efficiently treating Through Silicon Vias (TSVs) with sub-10 micron width and achieving high resolution filling of conductive materials, requiring high donor material speed and large stocks, which leads to inefficient donor material usage.
Innovation Solution
The method involves directing a laser beam within a two-dimensional field of view transverse to the donor's transport direction, allowing for clustered transfer of donor material to overlapping deposition ranges, reducing the need for high-speed donor transport and enhancing material efficiency by using a cluster pattern for target positions of electrically conductive elements, including TSVs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high donor material speed is used to maintain productivity, then production output is maintained, but donor material usage efficiency deteriorates
Solution Approach 1:
The patent segments the treatment process into clustered groups of TSVs that can be treated together. By organizing TSVs into clusters and treating them in groups rather than individually, the system reduces the overall donor material consumption while maintaining productivity. The clustering approach allows for more efficient material utilization across multiple targets.
Solution Approach 2:
The patent implements preliminary positioning and clustering of TSVs before the actual treatment process. By pre-organizing the target positions and planning the treatment sequence in advance, the system optimizes donor material delivery paths and reduces waste. This preliminary organization enables more efficient material usage without compromising production output.
2Manufacturing precision
If high donor material speed is required for sub-10 micron TSV filling, then filling resolution is achieved, but donor transport complexity increases
Solution Approach 1:
The patent introduces a temporal dimension to the treatment process by implementing sequential clustered treatment. Instead of treating all TSVs simultaneously requiring high-speed donor transport, the system processes clusters in sequence over time. This dimensional shift from spatial parallelism to temporal sequencing reduces the speed requirements and simplifies the donor transport system while maintaining sub-10 micron filling resolution.
Solution Approach 2:
The patent implements periodic treatment cycles where donor material is delivered in controlled pulses corresponding to specific clusters of TSVs. This periodic action allows the donor transport system to operate at lower speeds with regular intervals, reducing complexity compared to continuous high-speed transport. Each periodic cycle delivers material precisely when needed for the current cluster being treated.
3Productivity
If large stocks of donor material are maintained for high-speed processing, then continuous production is ensured, but material waste increases
Solution Approach 1:
The patent implements a self-regulating donor material delivery system that responds to the actual treatment needs of each cluster. The system automatically adjusts material delivery rates and timing based on the current processing stage, eliminating the need for large constant stocks. This self-service approach ensures continuous production by delivering material precisely when and where it is needed, minimizing waste while maintaining productivity.
Solution Approach 2:
The patent dynamically changes the parameters of donor material delivery based on the treatment stage and cluster being processed. By adjusting delivery rate, timing, and positioning parameters according to real-time process needs, the system maintains continuous production without requiring large material stocks. This parameter optimization reduces material waste while ensuring uninterrupted manufacturing flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves donor material usage efficiency and reduces the speed required for donor transport while maintaining productivity, allowing for efficient filling of TSVs and deposition of conductive tracks, thereby optimizing the chip die treatment process.
Implementation Method 1
impinging a laser beam on a side of the donor opposite a side facing the wafer; the laser beam tuned in timing, energy and direction to generate donor matter in the form of a plasma directed towards the TSV
Implementation Method 2
generate donor matter in the form of a plasma directed towards the TSV
Data Source
Figure 1
Figure 1A
Figure 2~2-3
AI summary
A method for providing position control information for controlling an impingement position of a laser beam for treatment of a chip die in a chip manufacturing process, comprises the steps of a) receiving a specification of positions (x,y) of a electrically conductive elements in the chip die, the positions having a first coordinate along a first direction (x) and a second coordinate (y) along a second direction in a plane defined by the chip die, said first and second direction being mutually transverse to each other, b) selecting a cluster of positions that is within a predetermined two- dimensional spatial range, wherein each pair of positions in the cluster at least has a first minimum difference in their first coordinates or a second minimum difference in their second coordinates and removing the next position from the ordered set, c) update the positions of the set of positions in accordance with an expected time needed to carry out the treatment for said cluster and a speed of a wafer comprising the chip die, d) repeating steps b-d until each of the positions in said set is assigned to a cluster.