Photovoltaic Cell Laser Doping Layout for Selective Carrier Transport
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Solution Overview
Problem
Existing photovoltaic cells, particularly interdigitated back contact (IBC) cells, face issues such as recombination of carriers due to poor selective transport performance from doping, complex manufacturing processes, and inability to integrate with conventional crystalline silicon cell production lines, hindering large-scale mass production.
Innovation Solution
A method involving the conversion of P-type polysilicon to N-type polysilicon using N-type dopants, including forming a tunneling oxide layer, laser processing, and high-temperature processing to enhance carrier transport, simplifying the manufacturing process and enabling integration with conventional production lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If doping is performed on a silicon wafer substrate during local diffusion of phosphorus and boron to create IBC cells, then carrier selective transport performance can be achieved, but recombination is caused and manufacturing complexity increases
Solution Approach 1:
The patent changes the doping approach from traditional local diffusion to a more advanced doping technique that achieves better carrier selective transport performance while reducing recombination. This parameter change in the doping process resolves the contradiction by improving reliability without proportionally increasing manufacturing complexity
Solution Approach 2:
The patent replaces the conventional mechanical/chemical diffusion process with a different doping mechanism that achieves superior results. This substitution allows for better carrier selective transport performance while avoiding the complexity and recombination issues associated with traditional local diffusion methods
2Reliability
If conventional IBC cell manufacturing procedures are used, then photovoltaic cells can be produced, but integration with conventional crystalline silicon cell production lines is impossible and large-scale mass production cannot be achieved
Solution Approach 1:
The patent makes the manufacturing process universal by designing it to be compatible with conventional crystalline silicon cell production lines. This allows the same production infrastructure to manufacture both traditional and advanced photovoltaic cells, achieving adaptability without sacrificing cell performance
Solution Approach 2:
The patent segments the manufacturing process into distinct stages, with the innovative doping step being a separate, modular process that can be integrated into existing production lines. This segmentation allows for easy integration while maintaining high performance standards
3Ease of manufacture
If traditional doping methods are used in IBC cells, then manufacturing can proceed, but recombination occurs and selective transport performance is poor
Solution Approach 1:
The patent changes key parameters of the doping process including the doping method, temperature, and concentration to achieve better selective transport performance. These parameter changes improve reliability while maintaining manufacturing feasibility through controlled process optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves selective transport performance and simplifies the manufacturing process, allowing for large-scale production of photovoltaic cells with enhanced photoelectric conversion efficiency.
Implementation Method 1
performing laser processing on the N-type dopants, to cause portions of the P-type amorphous silicon layer in contact with the N-type dopants to be doped with some of the phosphorus atoms in the N-type dopants
Implementation Method 2
doping is required to be performed on a silicon wafer substrate during local diffusion of phosphorus and boron
Implementation Method 3
performing laser processing on the protective layer and the amorphous silicon layer, to form a groove and a protrusion
Implementation Method 4
subjecting the silicon wafer to high temperature processing, to convert the amorphous silicon layer into a polycrystalline silicon layer
Implementation Method 5
A photovoltaic cell, also referred to as a solar cell, is a component that converts light energy into electrical energy by using a photovoltaic effect
Data Source
AI summary
Disclosed are a photovoltaic cell, a method for producing the same and a photovoltaic module. The method includes providing a silicon wafer; forming a tunneling oxide layer on the silicon wafer and a P-type amorphous silicon layer over the tunneling oxide layer; forming N-type dopants on the P-type amorphous silicon layer; performing laser processing on the N-type dopants to cause the P-type amorphous silicon layer to be converted into an amorphous silicon layer having alternatingly arranged P-type amorphous silicon and N-type amorphous silicon; removing the N-type dopant on the amorphous silicon layer and forming a protective layer over the amorphous silicon layer; performing processing on the protective layer and the amorphous silicon layer to form a groove and a protrusion; subjecting the silicon wafer to further processing to increase a depth of the groove; removing the protective layer; and subjecting the silicon wafer to high temperature processing.