Resonant Laser Diode Array Driver for Ultra-Short Low-Voltage Pulses
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Solution Overview
Problem
Conventional pulsed laser diode driver circuits face challenges in generating short, high-current pulses due to parasitic inductances, requiring high voltages and GaN-based switches, which are expensive and difficult to integrate with Silicon-based architectures, and are not easily tunable for various laser diode configurations.
Innovation Solution
The development of a pulsed laser diode array driver using a tunable resonant circuit with a discrete inductor and bypass capacitor, allowing for low-input voltage operation and integration with Silicon-based switches, enabling flexible pulse width tuning and compatibility with diverse laser diode configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of moving object
If high source voltage (greater than 40V to 100V) is used to overcome parasitic inductances, then the desired short pulse width (5 ns or less) is achieved, but the device complexity and cost increase due to requiring high-voltage GaN switches
Solution Approach 1:
The patent changes the voltage parameter from high voltage (40V-100V) to low voltage operation by introducing a resonant circuit that generates voltage amplification. The resonant circuit uses an inductor and capacitor to create a high-Q resonance that multiplies the voltage from low-voltage switches, eliminating the need for high-voltage GaN devices while maintaining the same pulse width performance
Solution Approach 2:
The resonant circuit acts as an intermediary between the low-voltage switch and the laser diode. It converts the low-voltage switch signal into a high-voltage resonant oscillation that drives the laser diode, serving as a voltage amplification stage that eliminates the direct need for high-voltage switching devices
2Duration of action of moving object
If high source voltage (greater than 40V to 100V) is used to overcome parasitic inductances, then the desired short pulse width (5 ns or less) is achieved, but the manufacturing cost increases due to expensive GaN technology
Solution Approach 1:
The patent changes the voltage parameter from high voltage (40V-100V) to low voltage operation by introducing a resonant circuit that generates voltage amplification. The resonant circuit uses an inductor and capacitor to create a high-Q resonance that multiplies the voltage from low-voltage switches, eliminating the need for high-voltage GaN devices while maintaining the same pulse width performance
Solution Approach 2:
The patent replaces expensive GaN high-voltage switches with inexpensive low-voltage switches combined with a passive resonant circuit. The resonant circuit components (inductor and capacitor) are low-cost passive elements that provide the necessary voltage amplification without requiring expensive active semiconductor devices
3Duration of action of moving object
If GaN field-effect transistors are used to withstand high voltages, then the desired short pulse width is achieved, but the integration difficulty with Silicon-based architectures increases
Solution Approach 1:
The patent changes the voltage parameter from high voltage (40V-100V) to low voltage operation by introducing a resonant circuit that generates voltage amplification. The resonant circuit uses an inductor and capacitor to create a high-Q resonance that multiplies the voltage from low-voltage switches, eliminating the need for high-voltage GaN devices while maintaining the same pulse width performance
Solution Approach 2:
The patent achieves homogeneity in material technology by using only Silicon-based components throughout the circuit. The resonant circuit and low-voltage switches can all be fabricated using standard Silicon CMOS processes, eliminating the need for heterogeneous integration of GaN devices with Silicon architectures
4Power
If conventional pulsed laser diode driver circuits are used, then high-current pulses are generated, but the tunability for various laser diode configurations is limited
Solution Approach 1:
The patent introduces dynamic tunability by making the resonant circuit parameters adjustable. The inductor and capacitor values can be selected or switched to change the resonant frequency and Q-factor, allowing the circuit to be adapted to different laser diode configurations, pulse width requirements, and current levels, transforming a fixed circuit into a dynamically adjustable system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the generation of high-current, ultra-short pulses at lower voltages, simplifies the design by avoiding high-voltage GaN switches, and allows for easy integration and tunability, reducing costs and improving reproducibility across different laser diode configurations.
Implementation Method 1
a pulsed resonant laser diode array driver includes an inductor having a first terminal and a second terminal, the first terminal being configured to receive a source voltage... The one or more laser diode switches and the bypass switch are configured to control a current flow through the inductor to produce respective high-current pulses through each row of the laser diode array, each of the high-current pulses corresponding to a peak current of a resonant waveform developed at that row of the laser diode array
Data Source
AI summary
A pulsed laser diode array driver includes an inductor having a first terminal configured to receive a source voltage, a source capacitor coupled between the first terminal of the inductor and ground, a bypass capacitor connected between a second terminal of the inductor and ground, a bypass switch connected between the second terminal of the inductor and ground, a laser diode array with one or more rows of laser diodes, and one or more laser diode switches, each being connected between a respective row node of the laser diode array and ground. The laser diode switches and the bypass switch are configured to control a current flow through the inductor to produce respective high-current pulses through each row of the laser diode array, each of the high-current pulses corresponding to a peak current of a resonant waveform developed at that row of the laser diode array.