Laser Edge Bead Removal for Semiconductor Wafer Fabrication

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Solution Overview

Problem

Edge bead removal in semiconductor wafer fabrication using ARC lamps results in abnormal patterns and deformation due to the large bandwidth of light wavelengths, causing uneven exposure and increased transition areas, which can lead to incomplete removal of light-sensitive materials.

Innovation Solution

Employing a laser source that emits a laser beam of a single wavelength, such as 193 nm, with a beam delivery system and optical assembly to project the beam precisely onto the wafer edge for controlled exposure, adjusting the wavelength or intensity to minimize transition areas and ensure complete removal of excess light-sensitive materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If an ARC lamp is used for edge bead removal, then the process can remove excess light-sensitive materials, but the large bandwidth of light wavelengths causes abnormal patterns and deformation due to uneven exposure

Engineering Contradiction:
Improveedge bead removal efficiencyVSAvoidexposure uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent changes the wavelength parameter from a broad spectrum (ARC lamp) to a single wavelength (laser), fundamentally altering the exposure characteristics to achieve both high removal efficiency and uniform exposure without the bandwidth-related defects

Inventive Principle:
Principle #35Parameter changes

2Productivity

If an ARC lamp with large bandwidth is used, then edge bead removal can be performed, but the transition area becomes large causing incomplete removal of light-sensitive materials

Engineering Contradiction:
Improveedge bead removal capabilityVSAvoidtransition area control
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The patent applies parameter change by selecting a single wavelength laser source, which directly controls and minimizes the transition area while maintaining effective edge bead removal capability

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If a laser source with single wavelength is used, then the transition area is minimized and exposure is controlled, but the device complexity increases compared to ARC lamps

Engineering Contradiction:
Improveexposure control precisionVSAvoidbeam delivery system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent replaces the complex mechanical ARC lamp system with an optical laser system, where the single wavelength nature of laser light provides inherent precision without requiring complex mechanical control mechanisms for wavelength selection

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The laser-based system provides a more focused and efficient edge bead removal process with a smaller transition area and better exposure energy profile compared to ARC lamps, ensuring consistent and complete removal of light-sensitive materials without deformation.

Implementation Method 1

a laser source configured to emit a laser beam of approximately a single wavelength

Methodology Applied
Scientific EffectLaser: Laser

Implementation Method 2

An ARC lamp is used to emit light beams on an edge portion of the wafer for edge bead removal

Methodology Applied
Scientific EffectPhoto-oxidation: Photo-oxidation

Data Source

PatentUS9908201B2Systems and methods for edge bead removal
Publication Date: 2018.03.06 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9908201B2 patent drawing
  • US9908201B2 patent drawing
  • US9908201B2 patent drawing

AI summary

Systems and methods are provided for edge bead removal. A laser beam of approximately a wavelength is received. The laser beam is delivered along a predetermined beam path. The laser beam is projected on an edge portion of a wafer for edge bead removal.