Ridge-Embedded Laser Electrode Layout for Cleavage-Safe Heat Dissipation

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Solution Overview

Problem

The challenge in semiconductor laser elements is to secure a good heat dissipation characteristic on the end surfaces while preventing a decrease in quality due to cleavage defects caused by thick electrodes embedding the ridge portion during manufacturing.

Innovation Solution

The semiconductor laser element design includes a first electrode with specific regions that do not include corners in certain distance ranges, ensuring close proximity to the end surfaces for effective heat dissipation without causing cleavage defects, and a manufacturing method involving controlled cleavage along specific lines to minimize defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the first electrode is made thick to embed the ridge portion for good heat dissipation, then heat dissipation characteristic is improved, but cleavage defects occur and quality of end surfaces decreases

Engineering Contradiction:
Improveheat dissipation characteristicVSAvoidquality of end surface
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The first electrode is designed with non-uniform thickness distribution, having a first thickness in the region extending in the third direction and a second thickness in the region extending in the fourth direction. This local variation in thickness allows the electrode to provide sufficient heat dissipation while avoiding excessive thickness at specific locations that would cause cleavage defects during manufacturing.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the geometric parameters of the first electrode, specifically controlling the distances D1, S1, and S2, and defining the relationship between the first and second thicknesses. By optimizing these parameters, the electrode achieves the right balance between heat dissipation capability and manufacturing quality.

Inventive Principle:
Principle #35Parameter changes

2Temperature

If the first electrode reaches the vicinity of both end surfaces for heat dissipation, then heat dissipation is improved, but the electrode becomes too thick causing cleavage defects

Engineering Contradiction:
Improveheat dissipation on end surfacesVSAvoidquality of end surface
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The first electrode exhibits different thickness characteristics in different spatial regions. The electrode extends to the vicinity of both end surfaces to ensure heat dissipation, but the localized thickness variation prevents the electrode from being uniformly too thick, thereby avoiding cleavage defects.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent introduces a dimensional variation in the electrode structure by defining different thicknesses (first thickness and second thickness) in different directional regions. This three-dimensional geometric control allows the electrode to achieve heat dissipation proximity to end surfaces while maintaining manufacturing reliability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS12476435B2Semiconductor laser element, semiconductor laser device, and method for manufacturing semiconductor laser element
Publication Date: 2025.11.18 HAMAMATSU PHOTONICS KK
  • US12476435B2 patent drawing
  • US12476435B2 patent drawing
  • US12476435B2 patent drawing

AI summary

A semiconductor laser element includes: a semiconductor substrate; a semiconductor laminate; a first electrode in which a ridge portion of the semiconductor laminate is embedded; and a second electrode. A first region of a side surface of the first electrode is separated from a first end surface in such a manner to extend away from the first end surface as the first region extends away from the ridge portion to both sides. A shortest distance between a first side surface and the first region is smaller than each of a shortest distance between a third side surface and a third region and a shortest distance between a fourth side surface and a fourth region. The first region does not include a corner in a range satisfying D1≤S1 and D1≤S2.