Edge-Emitting Laser Electrode Layout for Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor light emitting devices using edge-emitting semiconductor lasers face challenges in heat dissipation and efficient electrical connections, leading to potential overheating and performance limitations.
Innovation Solution
The semiconductor light emitting device employs a substrate made from materials like glass epoxy resin or ceramic, a case made from glass or translucent resin, and a sub-mount substrate with through-interconnects to enhance heat dissipation, along with a specific arrangement of front-surface and back-surface electrodes for improved electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If edge-emitting semiconductor laser is used as light source, then light emission function is achieved, but heat dissipation becomes problematic
Solution Approach 1:
The device is divided into functionally independent modules: the edge-emitting semiconductor laser element for light generation, the sub-mount substrate for electrical connection and heat dissipation, and the main substrate for mechanical support. This segmentation allows each module to be optimized for its specific function, particularly heat management.
Solution Approach 2:
The sub-mount substrate acts as an intermediary component between the laser element and the main substrate. It provides through-interconnects that conduct heat away from the laser element while maintaining electrical connections, serving as a thermal management mediator.
2Ease of manufacture
If conventional electrical connection structure is used, then simple manufacturing is achieved, but electrical connection efficiency deteriorates
Solution Approach 1:
The electrical connection structure transitions from planar connections to three-dimensional vertical connections through the sub-mount substrate. The through-interconnects extend in the thickness direction, providing multiple connection paths and improving current distribution without complicating the manufacturing process.
3Temperature
If heat dissipation structure is added, then temperature control is improved, but device complexity increases
Solution Approach 1:
The sub-mount substrate performs multiple functions simultaneously: it provides electrical connections through the through-interconnects, dissipates heat from the laser element, and offers mechanical support. This multi-functionality reduces the need for separate heat dissipation components, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively manages heat and enhances electrical connections, ensuring stable operation and improved performance of the edge-emitting semiconductor laser, preventing overheating and maintaining efficient light emission.
Implementation Method 1
a sub-mount substrate with through-interconnects to enhance heat dissipation
Implementation Method 2
a typical semiconductor light emitting device uses an edge-emitting semiconductor laser as a light source
Data Source
AI summary
A semiconductor light emitting device includes an edge-emitting element including emitters, a first front-surface electrode, a second front-surface electrode, first wires, and second wires. The emitters include a first emitter including a first element electrode, and a second emitter including a second element electrode. The first front-surface electrode is electrically connected to the first element electrode. The second front-surface electrode is electrically connected to the second element electrode. The first wires are electrically connecting the first element electrode to the first front-surface electrode. The second wires are electrically connecting the second element electrode to the second front-surface electrode. In plan view, a largest distance between adjacent ones of the second wires in the first direction is greater than a largest distance between adjacent ones of the first wires in the first direction.