Semiconductor Laser Epitaxial Structure With Grating-Coupled Vertical Emission
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Solution Overview
Problem
Semiconductor lasers, particularly edge emitting lasers, face challenges with wide divergence angles that hinder optical fiber coupling, while vertical cavity surface emitting lasers achieve easy coupling but with low optical output power, limiting light propagation distance.
Innovation Solution
A semiconductor laser epitaxial structure with a horizontal cavity, a grating layer to convert horizontal light to vertical light, and a semiconductor optical amplifier to enhance optical output power, achieving a small divergence angle and high optical output power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If edge emitting laser (EEL) is used, then high optical output power is achieved, but wide divergence angle makes it difficult to couple with optical fiber
Solution Approach 1:
The patent transforms the light emission direction from horizontal (parallel to epitaxial plane) to vertical (perpendicular to epitaxial plane) by incorporating a grating layer that converts horizontal light to vertical light. This dimensional change enables the laser to achieve both high optical output power characteristics of EEL and small divergence angle characteristics suitable for optical fiber coupling.
2Ease of operation
If vertical cavity surface emitting laser (VCSEL) is used, then small divergence angle and easy optical fiber coupling are achieved, but low optical output power limits light propagation distance
Solution Approach 1:
The patent merges the advantages of both EEL and VCSEL by combining a horizontal cavity structure (which provides high optical output power) with a grating layer for vertical light conversion (which provides small divergence angle). This hybrid approach integrates the high power characteristic of EEL with the easy coupling characteristic of VCSEL in a single device.
3Ease of operation
If horizontal cavity with grating layer is used to convert light direction, then small divergence angle is achieved, but device complexity increases
Solution Approach 1:
The patent divides the laser structure into distinct functional layers: a horizontal cavity for light generation, a grating layer for light direction conversion, and a semiconductor optical amplifier for power enhancement. This segmentation allows each component to perform its specific function efficiently while maintaining overall system manageability and manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor laser epitaxial structure achieves a divergence angle as small as 1 to 3 degrees and higher optical output power than traditional VCSELs, facilitating applications like sensing, LiDAR, and optical communication with improved manufacturing yield and reduced costs.
Implementation Method 1
a grating layer located within the optical field distribution... The grating layer is configured to convert a horizontal light to a vertical light
Implementation Method 2
a first semiconductor optical amplifier disposed between a light-emitting surface of the semiconductor laser epitaxial structure and the horizontal cavity
Implementation Method 3
a first tunnel junction layer disposed between the horizontal cavity and the first semiconductor optical amplifier to electrically connect the horizontal cavity and the first semiconductor optical amplifier
Data Source
AI summary
A semiconductor laser epitaxial structure includes a horizontal cavity configured to generate an optical field distribution, a grating layer located within the optical field distribution, a first semiconductor optical amplifier disposed between a light-emitting surface of the semiconductor laser epitaxial structure and the horizontal cavity, and a first tunnel junction layer disposed between the horizontal cavity and the first semiconductor optical amplifier. The grating layer is configured to convert a horizontal light to a vertical light. The semiconductor laser epitaxial structure does not require alignment, the yield rate of manufacturing the semiconductor laser is increased, and the manufacturing cost and manufacturing processes can be reduced.