Laser Etching Control for Uniform Mask Critical Dimensions
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Solution Overview
Problem
The existing substrate treating processes face challenges in achieving uniform critical dimensions of patterns on masks due to differences in etching rates between monitoring and anchor patterns, leading to over-etching and decreased etching efficiency caused by abnormally growing bubbles during laser irradiation.
Innovation Solution
A substrate treating apparatus and method that includes a housing, support unit, liquid supply, laser module for local heating, and a vision module to monitor bubble generation, with a controller determining process continuation based on image comparisons to maintain optimal etching conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser irradiation is used for local heating to correct critical dimensions, then manufacturing precision is improved, but abnormally growing bubbles cause etching efficiency to deteriorate
Solution Approach 1:
The vision module continuously monitors the substrate surface during laser irradiation to detect bubble generation in real-time. When bubbles are detected, the controller adjusts or stops laser irradiation to prevent etching efficiency degradation, creating a closed-loop feedback system that balances precision correction with process efficiency
Solution Approach 2:
The system uses intermittent laser irradiation rather than continuous irradiation, activating the laser only when needed for critical dimension correction and pausing when bubbles are detected. This periodic action allows the system to achieve precision goals while minimizing bubble-related efficiency loss
2Manufacturing precision
If repeated etching is performed to equalize critical dimensions of monitoring and anchor patterns, then manufacturing precision is improved, but process time increases
Solution Approach 1:
The system performs preliminary critical dimension measurement and analysis before the main etching process. By identifying which patterns need correction and by how much in advance, the system can apply targeted laser irradiation during etching, avoiding the need for multiple repeated etching cycles and reducing total process time
Solution Approach 2:
Instead of uniformly etching the entire substrate multiple times, the system applies laser irradiation locally to specific regions where critical dimension correction is needed. This localized approach achieves the same precision improvement in fewer passes compared to global repeated etching
3Manufacturing precision
If critical dimension correction process is added to equalize monitoring and anchor patterns, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The system combines the critical dimension correction function with the existing laser module and control system already present in the substrate treating apparatus. By integrating the vision module's bubble detection capability with the laser control, the system achieves precision correction without adding separate dedicated correction equipment, thus limiting complexity increase
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures uniform critical dimensions of patterns and prevents etching efficiency degradation by monitoring and managing bubble growth, thereby optimizing the etching process and reducing process errors.
Implementation Method 1
a laser module configured to irradiate a laser to the substrate to which the treating liquid is supplied
Implementation Method 2
irradiate a laser to the substrate to heat the substrate
Implementation Method 3
monitors a point at which the laser is irradiated among the substrate
Data Source
AI summary
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing; a support unit positioned within the housing and configured to support a substrate; a liquid supply unit configured to supply a treating liquid to the substrate supported on the support unit; and a laser module configured to irradiate a laser to the substrate to which the treating liquid is supplied; and a vision module for monitoring a point at which the laser is irradiated among the substrate.