Semiconductor Laser Electric Field Control Layer
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Solution Overview
Problem
Conventional semiconductor laser devices for optical communication systems face challenges in achieving high power output while maintaining low power consumption, as increased driving current and voltage lead to higher power consumption and thermal saturation, and existing solutions either compromise on mode transfer or suffer from crystal defects and manufacturing complexities.
Innovation Solution
The introduction of an electric-field-distribution-control layer with a band gap energy greater than the quantum well active layer, configured with InP and GaInAsP layers, reduces optical electric field distribution to the p-InP cladding layer, minimizing inter valence band absorption and allowing for wider active layer widths while maintaining single transverse mode operation, thus reducing electric and thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the active layer width is increased to reduce electric and thermal resistance, then power consumption is reduced, but mode transfer occurs and single transverse mode operation is lost
Solution Approach 1:
The patent applies local quality by creating an asymmetric electric field distribution through the electric-field-distribution-control layer. This layer is positioned only on one side of the quantum well active layer, locally modifying the electric field to suppress mode transfer while allowing the active layer width to be increased for reduced resistance and power consumption.
Solution Approach 2:
The electric-field-distribution-control layer acts as an intermediary between the quantum well active layer and the cladding layer. It mediates the electric field distribution, preventing direct interaction between the wide active layer and the cladding that would cause mode transfer, thus enabling both wide active layer and single mode operation.
2Power
If driving current and voltage are increased to achieve high power output, then optical output is improved, but power consumption and thermal saturation increase
Solution Approach 1:
The patent changes the electric field distribution parameter by introducing the electric-field-distribution-control layer with specific band gap energy. This parameter change allows the device to achieve higher optical output efficiency, reducing the driving current and voltage needed for a given power output, thereby reducing power consumption and thermal saturation.
3Ease of manufacture
If conventional semiconductor laser structures are used, then manufacturing is simpler, but crystal defects occur and mode transfer happens
Solution Approach 1:
The patent uses composite materials by combining multiple semiconductor layers with different band gap energies (InP, GaInAsP, AlInAs) to form the electric-field-distribution-control layer. This composite structure allows precise control of electric field distribution while maintaining lattice matching to avoid crystal defects, achieving both reliability and manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high power output with low power consumption, reduces thermal saturation, and simplifies manufacturing, making the semiconductor laser device more efficient and cost-effective for mass production.
Implementation Method 1
minimizing inter valence band absorption
Implementation Method 2
an active layer which is a multi quantum well active layer
Data Source
AI summary
An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.