Laser Flattening of Irregularity Layers on Hard Substrates
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Solution Overview
Problem
Existing semiconductor manufacturing methods are inefficient in flattening irregularity layers on substrates, particularly those made of hard materials like silicon oxide, silicon carbide, and silicon carbonitride, which require extensive polishing time and may not achieve the necessary flatness for bonding or protective layers.
Innovation Solution
A laser processing apparatus that uses a holder, radiation unit, and controller to radiate a laser beam onto protrusions of the irregularity layer, flattening it by absorbing or scattering the protrusions, thereby reducing the need for extensive polishing and shortening the flattening time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CMP polishing is used to flatten irregularity layers made of hard materials like silicon oxide, silicon carbide, and silicon carbonitride, then the flatness required for bonding or protective layers can be achieved, but the polishing time becomes excessively long
Solution Approach 1:
The patent replaces the mechanical CMP polishing system with a laser-based processing system. The laser beam irradiates the irregularity layer, causing localized melting and vaporization of protrusions through optical energy conversion, thereby flattening the surface without mechanical contact. This substitution of mechanical action with optical/thermal action resolves the contradiction by achieving the same flattening effect without the time-consuming mechanical polishing process.
Solution Approach 2:
The patent utilizes phase transitions of the irregularity layer material under laser irradiation. The laser beam causes the material to transition from solid to liquid (melting) and then to gas (vaporization), removing protrusions through controlled phase changes. This approach enables rapid flattening of hard materials like silicon oxide and silicon carbide without the prolonged mechanical polishing time required by conventional CMP methods.
2Manufacturing precision
If conventional polishing methods are used on hard materials, then flattening can be achieved, but the process requires extensive time and may not achieve necessary flatness
Solution Approach 1:
The patent replaces mechanical polishing with laser processing, where optical energy is converted to thermal energy to melt and vaporize material. This non-contact method achieves superior flatness control and significantly higher productivity compared to conventional mechanical polishing of hard materials, as the laser can rapidly remove material without the limitations of mechanical abrasion speed.
Solution Approach 2:
The laser processing system employs periodic pulsed irradiation to flatten the irregularity layer. By controlling the pulse duration, frequency, and duty cycle, the system can precisely remove material while maintaining control over the flattening process. This periodic action enables both high precision flatness achievement and improved productivity compared to continuous mechanical polishing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laser processing method effectively flattens irregularity layers in a short time, allowing for improved bonding and protective layer formation without the need for prolonged polishing, enhancing the efficiency and precision of semiconductor substrate processing.
Implementation Method 1
a radiation unit configured to radiate a laser beam to a protrusion of the irregularity layer to flatten the irregularity layer
Implementation Method 2
flattening it by absorbing or scattering the protrusions
Data Source
AI summary
A substrate processing system includes a laser processing apparatus including a holder and a radiation unit, the holder being configured to hold a substrate including a base substrate, an irregularity pattern formed on a main surface of the base substrate, and an irregularity layer formed along the irregularity pattern, the radiation unit being configured to radiate a laser beam to a protrusion of the irregularity layer to flatten the irregularity layer by removing the protrusion in a state that the substrate is held by the holder; a controller configured to control a position of an irradiation point of the laser beam; and a polishing apparatus configured to polish the irregularity layer in which the protrusion is removed with the laser beam to be flattened.