Laser Grooving and Plasma Dicing for Element Chip Manufacturing
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Solution Overview
Problem
The manufacturing process of element chips faces challenges in achieving high-quality production due to debris from the laser grooving step affecting the plasma-dicing process, leading to irregularities and non-uniform configurations in the trenches, which deteriorate the appearance and strength of the chips.
Innovation Solution
A two-step laser grooving process is employed, where a first step ablates the resin and wiring layers, and a second step melts the semiconductor layer to planarize the trench bottom, incorporating debris and improving the trench's flatness and linearity, followed by a cleaning step to enhance the plasma-etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If laser grooving is performed to form trenches along dicing regions, then the substrate is prepared for division into element chips, but debris is generated and adheres to the substrate surface, affecting plasma-dicing quality
Solution Approach 1:
The patent converts the harmful debris generated during laser grooving into a beneficial planarizing agent. The debris is melted together with the semiconductor layer surface to fill in irregularities and asperities, transforming the harmful scattering particles into a smoothing mechanism that improves trench flatness and prepares the surface for high-quality plasma etching
Solution Approach 2:
The patent changes the physical state of the debris from solid particles to molten material by controlling laser parameters. By adjusting laser power, pulse duration, and scanning speed, the debris and semiconductor layer surface are melted together to planarize the trench bottom, converting the harmful solid debris into a beneficial molten filling material that smooths surface irregularities
2Device complexity
If a single-step laser grooving process is used, then the process is simple and fast, but the trench bottom is irregular and affects plasma etching uniformity
Solution Approach 1:
The patent segments the laser grooving process into two distinct steps: first, ablation of the resin and wiring layers to create initial trenches; second, melting of the semiconductor layer surface to planarize the trench bottom. This segmentation allows each step to be optimized independently, achieving both efficient material removal and high surface flatness for uniform plasma etching
Solution Approach 2:
The patent performs a preliminary ablation step before the melting step to remove the resin and wiring layers and create the initial trench structure. This preliminary action prepares the surface by removing organic and metallic materials that would interfere with the subsequent melting and planarizing process, ensuring that only the semiconductor layer is melted to achieve the desired flatness
3Productivity
If debris is not removed after laser grooving, then the process is efficient with fewer steps, but the plasma-dicing quality deteriorates due to debris interference
Solution Approach 1:
The patent eliminates the need for a separate debris removal step by converting the harmful debris into a beneficial planarizing agent. The debris is melted together with the semiconductor layer to fill surface irregularities, transforming the harmful scattering particles into a smoothing mechanism that actually improves plasma etching quality while maintaining processing efficiency
Solution Approach 2:
The laser grooving process itself performs the function of surface preparation by melting the debris and semiconductor layer together to planarize the trench bottom. The process is self-service in that the debris generated during grooving is automatically utilized to improve surface flatness, eliminating the need for external cleaning or removal operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in improved flatness and uniformity of the trench bottom, reducing debris localization, and stabilizing the plasma-dicing process, leading to higher quality element chips with enhanced reliability and productivity.
Implementation Method 1
a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions
Implementation Method 2
the laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions
Implementation Method 3
a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips
Data Source
AI summary
A manufacturing process of an element chip comprises a preparing step for preparing a substrate having first and second sides opposed to each other, the substrate containing a semiconductor layer, a wiring layer and a resin layer formed on the first side, and the substrate including a plurality of dicing regions and element regions defined by the dicing regions. Also, the manufacturing process comprises a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions. Further, the manufacturing process comprises a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips. The laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions.