Laser Heating for Etch Selectivity in Semiconductor Layers
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving adequate etch selectivity and uniformity as device scaling-down continues, particularly in forming precise patterns and structures due to limitations in lithographic and etching processes.
Innovation Solution
The method involves forming a first and second layer of different materials on a semiconductor substrate, heating them with a laser beam, and depositing a third layer over them to enhance etch selectivity, using techniques like atomic layer deposition to ensure uniform thickness and improved film quality, thereby increasing the etch selectivity between layers during subsequent etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic and etching processes are used for device scaling-down, then manufacturing complexity is reduced, but etch selectivity and uniformity deteriorate
Solution Approach 1:
The patent applies preliminary action by heating the first and second layers with a laser beam before the deposition process. This pre-heating modifies the substrate and layer properties in advance, creating optimal conditions for subsequent atomic layer deposition. The laser heating activates the surface and prepares it for enhanced film deposition, thereby improving etch selectivity before the actual patterning process begins.
Solution Approach 2:
The patent employs parameter changes by utilizing laser beam heating to alter the temperature and physical state of the first and second layers. This parameter modification enables atomic layer deposition to occur under optimized conditions, resulting in improved film uniformity and etch selectivity. The laser parameters (power, duration, wavelength) are controlled to achieve the desired material property changes without damaging the underlying structure.
2Manufacturing precision
If atomic layer deposition is used to deposit the third layer, then film uniformity and quality are improved, but manufacturing time increases
Solution Approach 1:
The laser beam heating serves as a preliminary action that prepares the substrate surface for atomic layer deposition. By pre-heating the first and second layers, the process creates optimal surface conditions that enhance deposition efficiency and film quality. This preliminary preparation allows for faster and more uniform film formation compared to conventional deposition methods.
Solution Approach 2:
The patent replaces conventional thermal heating mechanisms with laser beam heating. This substitution provides more precise and localized heating control, enabling atomic layer deposition to proceed more efficiently. The laser method offers better temperature control and faster heating rates compared to traditional hot plates or furnaces, thereby improving film uniformity while reducing overall process time.
3Manufacturing precision
If laser beam heating is applied before deposition, then etch selectivity is enhanced, but energy consumption increases
Solution Approach 1:
The laser beam heating applies energy locally and selectively to only the regions requiring modification. By targeting specific areas of the first and second layers, the process achieves enhanced etch selectivity without uniformly heating the entire wafer. This localized approach minimizes overall energy consumption while maintaining the necessary temperature gradients for improved film deposition and etch selectivity.
Solution Approach 2:
The laser beam heating is applied in controlled, periodic pulses rather than continuous exposure. This periodic action allows for precise energy delivery, heating the material just enough to enhance deposition and etch selectivity without excessive energy input. The pulsed laser method provides better energy efficiency compared to continuous heating while achieving the same material property modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the etch selectivity and uniformity of the third layer on the substrate, allowing for more precise pattern transfer and reduced manufacturing time, leading to enhanced semiconductor structure formation and increased device performance.
Implementation Method 1
heating the first layer and the second layer with a laser beam
Implementation Method 2
heating the first layer and the second layer with a laser beam... so that an etch selectivity between the first layer and the second layer in a subsequent etching process may be increased
Implementation Method 3
depositing a third layer over the heated first layer and the second layer
Data Source
AI summary
A method for forming a semiconductor structure is provided. The method includes forming a first layer over a semiconductor substrate. The first layer is made of a first material. The method also includes forming a second layer over the first layer. The second layer is made of a second material that is different from the first material. The second layer has a first opening exposing a portion of a top surface of the first layer. The method also includes heating the first layer and the second layer with a laser beam, depositing a third layer over the second layer and covering a sidewall of the first opening, and etching the first layer through the first opening to form a second opening in the first layer.