Semiconductor Laser Structure for Junction-Down Leakage Isolation
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Solution Overview
Problem
Semiconductor laser elements face challenges in achieving high output due to heat generation and current leakage during junction-down mounting, particularly with c-plane GaN substrates where crystal defects concentrate, leading to incomplete coverage by insulating protective films.
Innovation Solution
A semiconductor laser element design featuring a recessed portion and ion implantation region in the p-type semiconductor layer, extending parallel to the ridge portion, with an insulation layer covering the ion implantation region, to prevent current leakage by separating the solder from the core and enhancing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a c-plane GaN substrate with a core region is used, then the semiconductor laser element can be manufactured, but crystal defects concentrate in the core region causing incomplete coverage by insulating protective films and current leakage
Solution Approach 1:
The patent applies preliminary action by forming the recessed portion in the p-type semiconductor layer before applying the insulating protective film. This preprocessing step creates a structural feature that guides the solder away from the core region, ensuring that even if the insulating film has incomplete coverage due to the core's irregular surface, current leakage is prevented by the physical separation created by the recessed portion.
Solution Approach 2:
The recessed portion acts as an intermediary structure between the core region and the solder. By creating this intermediate feature, the patent introduces a new element that mediates the interaction between solder and the core, preventing direct contact and current leakage without requiring perfect insulating film coverage.
2Power
If junction-down mounting is performed to improve heat dissipation, then high output can be achieved, but solder may creep up to the side surface causing current leakage
Solution Approach 1:
The patent applies preliminary anti-action by creating the recessed portion and ion implantation region in advance to counteract the potential harmful effect of solder creeping up during junction-down mounting. This preventive measure is implemented before mounting, creating a barrier that actively opposes the solder's tendency to migrate toward the side surface, thereby preventing current leakage while maintaining the heat dissipation benefits of junction-down mounting.
3Reliability
If ion implantation is performed to create high resistance region, then current leakage is prevented, but manufacturing process complexity increases
Solution Approach 1:
The patent merges multiple functions into the ion implantation process: it creates the high resistance region to prevent current leakage, modifies the electrical properties of the core region, and works synergistically with the recessed portion structure. By combining these functions into a single ion implantation step, the patent reduces the need for additional separate manufacturing processes, thereby mitigating the increase in manufacturing complexity while achieving reliable current leakage prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents current leakage and ensures reliable operation by isolating the solder from the core, maintaining insulation even with incomplete coverage by the insulation layer, thus enhancing the semiconductor laser's performance.
Implementation Method 1
an ion implantation region that is formed by implanting ions into a region including the core
Data Source
AI summary
Provided is a semiconductor laser element according to the present technology that includes a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.