Laser Processing Apparatus Melt Removal via Gas Injection
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Solution Overview
Problem
The formation of laser-processed grooves in silicon or sapphire wafers is hindered by the melting and re-deposition of debris, preventing the creation of grooves with desired depths during laser ablation processing.
Innovation Solution
A laser processing apparatus with a melt processing system that includes a gas injecting section to direct high-speed gas at the laser-processed area and a melt sucking section to remove debris, ensuring the groove is formed to the desired depth without re-deposition on the wafer surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser ablation processing is performed on silicon or sapphire wafers to form grooves, then material is removed from the wafer surface, but the removed material melts and re-deposits on the groove, preventing the formation of grooves with desired depth
Solution Approach 1:
The patent extracts the harmful melt from the laser processing zone by introducing high-speed gas flow that carries the molten material away from the groove before it can re-deposit. The gas flow effectively removes the melt debris from the processing area, preventing it from adhering to the groove walls or surface.
Solution Approach 2:
The patent employs pneumatic principles by using high-speed gas flow (supplied through gas supply means) to transport the melted material away from the laser processing zone. The gas flow creates a气流 that carries the melt out of the groove area, preventing re-deposition and enabling precise groove depth control.
2Productivity
If high-power laser beam is applied continuously to remove material efficiently, then processing speed increases, but the melt accumulates and adheres to the wafer surface
Solution Approach 1:
The patent introduces high-speed gas flow as an intermediary substance between the laser beam and the wafer surface. This gas mediator carries away the melt particles generated by laser ablation, preventing them from adhering to the wafer surface while allowing the laser processing to continue at high speed.
Solution Approach 2:
The patent uses pneumatic flow to continuously remove melt from the processing zone during high-power laser processing. The gas flow system enables sustained high-speed processing by preventing melt accumulation and adhesion, thereby maintaining productivity without the harmful side effect of surface contamination.
3Manufacturing precision
If laser processing is performed without melt removal, then the processing system is simpler, but the groove depth cannot be controlled precisely due to melt burying back
Solution Approach 1:
The patent employs a relatively simple pneumatic system (gas supply means and gas flow paths) to achieve precise groove depth control. The high-speed gas flow effectively removes melt without requiring complex mechanical or thermal control systems, thus achieving precision while maintaining relatively low system complexity.
Solution Approach 2:
The patent replaces complex mechanical melt removal systems with a simpler gas flow-based approach. Instead of using mechanical scrapers, nozzles, or thermal control mechanisms, the invention uses directed gas flow to carry away melt particles, achieving precise groove depth control with a simpler system architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of laser-processed grooves with precise depth control by effectively removing melt debris during the processing, preventing adhesion on the wafer surface and ensuring consistent groove formation.
Implementation Method 1
a method of forming laser-processed grooves by applying a laser beam having a wavelength capable of being absorbed by the wafer along the scheduled division lines formed on the wafer and thus performing ablation processing
Implementation Method 2
applying a laser beam having a wavelength capable of being absorbed by the wafer
Implementation Method 3
the gas injecting section injecting high-speed gas from the opening to the workpiece, and a melt sucking section having a suction port disposed so as to surround the opening of the gas injecting section, the suction port sucking the melt scattered by the high-speed gas injected from the opening
Data Source
AI summary
A laser processing apparatus includes a melt processing unit for processing a melt formed by laser processing, the melt processing unit being disposed downstream of a condenser in a laser beam irradiating direction. The melt processing unit includes a gas injecting section having an opening allowing the passage of a laser beam applied from the condenser, the gas injecting section injecting high-speed gas from the opening to a workpiece, and a melt sucking section having a suction port disposed so as to surround the opening of the gas injecting section, the suction port sucking the melt scattered by the high-speed gas injected from the opening. The gas injecting section is connected to high-pressure gas supply source, and the melt sucking section is connected to melt sucking unit.