Laser-Melted Epitaxial Semiconductor Layer Without Vacuum Growth
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Solution Overview
Problem
Existing methods for forming single crystalline semiconductor layers require high-temperature processes or vacuum conditions, making it difficult to achieve excellent properties under various conditions and environments.
Innovation Solution
A method involving a crystallization base member with a single crystal structure, a semiconductor layer with amorphous or polycrystalline structure, a heating layer that can be heated by a laser, and laser-induced melting and cooling to form a single crystallized epitaxial semiconductor layer without high-temperature substrate heating or vacuum processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If high-temperature vapor deposition method is used to grow single crystal semiconductors, then single crystal structure is achieved, but thermal burden on underlying layer occurs and high-temperature process is required
Solution Approach 1:
The patent employs phase transition of semiconductor material from liquid to solid state through controlled cooling. Molten semiconductor material is deposited on the substrate and then cooled to form single crystal structure, replacing the high-temperature vapor deposition process. This phase transition approach achieves single crystal growth without subjecting the underlying layer to high thermal burden.
Solution Approach 2:
The patent replaces the thermal field-based vapor deposition process with a liquid-phase deposition process. Instead of using high-temperature vapor transport and condensation, the invention uses direct liquid deposition followed by controlled solidification, substituting thermal mechanical processes with a more controlled phase transition approach.
2Stability of the object's composition
If molecular beams in vacuum are used to grow single crystal semiconductors, then single crystal structure is achieved, but vacuum process requirements limit manufacturing flexibility
Solution Approach 1:
The patent uses liquid-phase deposition followed by solidification to form single crystals, replacing the vacuum molecular beam process. This phase transition method can be performed in ambient or controlled atmosphere conditions without requiring high vacuum environments, significantly improving manufacturing flexibility and adaptability.
Solution Approach 2:
The invention substitutes the vacuum-based molecular beam epitaxy process with a liquid-phase deposition process that does not require vacuum conditions. This replacement enables single crystal growth under more flexible and economically viable manufacturing conditions.
3Stability of the object's composition
If existing single crystal growth methods are used, then single crystalline semiconductor layers are formed, but the process complexity and manufacturing cost increase
Solution Approach 1:
The patent employs a straightforward liquid-phase deposition and solidification process to form single crystals. This approach simplifies the manufacturing process compared to complex vapor deposition or molecular beam techniques, while maintaining the ability to produce high-quality single crystalline semiconductor layers.
Solution Approach 2:
The invention uses a disposable mask layer that defines the crystal growth pattern. This simple, sacrificial mask approach simplifies the overall manufacturing process by providing easy pattern definition without requiring complex in-situ patterning techniques, thereby reducing process complexity and cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of semiconductor layers with excellent properties under diverse conditions, facilitating the manufacturing of high-performance semiconductor devices with improved economic efficiency and flexibility.
Implementation Method 1
a step for forming a heating layer which may be heated by a laser on the semiconductor layer; a step for melting the semiconductor layer by heating the heating layer by irradiating a laser to the heating layer
Implementation Method 2
a step for forming a single crystallized epitaxial semiconductor layer from the semiconductor layer through single crystallization of the semiconductor layer according to the single crystalline structure of the crystallization base member by cooling the molten semiconductor layer
Data Source
AI summary
The present disclosure provides a method for forming an epitaxial semiconductor layer including a step for providing a crystallization base member having a single crystal structure; a step for forming a semiconductor layer having one of an amorphous structure and a polycrystalline structure in contact with the crystallization base member; a step for forming a heating layer which may be heated by a laser on the semiconductor layer; a step for melting the semiconductor layer by heating the heating layer by irradiating a laser to the heating layer; and a step for forming a single crystallized epitaxial semiconductor layer from the semiconductor layer through single crystallization of the semiconductor layer according to the single crystalline structure of the crystallization base member by cooling the molten semiconductor layer.