Laser-Assisted MOCVD for Low-Carbon Nitride Semiconductor Growth
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Solution Overview
Problem
Background C impurity in nitride-based semiconductors poses a significant bottleneck for advancing semiconductor device technologies, necessitating effective methods for its minimization.
Innovation Solution
Laser-assisted metal-organic chemical vapor deposition (MOCVD) devices and methods, where a laser beam is directed above a rotatable substrate support surface, and precursors are introduced to flow through the laser beam, enhancing the thermal decomposition and irradiation of precursors to reduce carbon incorporation in the deposited material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional MOCVD methods are used to deposit nitride-based semiconductors, then the deposition process is simple and efficient, but background carbon impurity is incorporated into the material
Solution Approach 1:
The patent combines laser irradiation with the MOCVD deposition process by introducing a laser beam into the reaction chamber. The laser beam is directed through a window into the chamber where precursors decompose on the substrate, merging optical energy input with thermal chemical vapor deposition to suppress carbon impurity incorporation while maintaining deposition efficiency
Solution Approach 2:
The laser beam acts as an intermediary energy source that selectively interacts with the precursor molecules and substrate. By tuning the laser wavelength to match vibrational modes of specific bonds (such as C-H or C-N bonds), the laser selectively activates desired reactions while suppressing unwanted carbon incorporation, serving as a mediator between energy input and chemical transformation
2Manufacturing precision
If laser beam is positioned close to the substrate (within 10 mm), then carbon incorporation is suppressed effectively, but the risk of substrate damage from excessive heating increases
Solution Approach 1:
The laser beam provides localized energy input primarily at the substrate surface and in the immediate vicinity where precursor decomposition occurs. This local quality of heating—concentrated at the deposition interface rather than throughout the entire substrate—enables suppression of carbon incorporation at the critical growth front while minimizing bulk substrate temperature rise and associated damage risks
Solution Approach 2:
The system employs periodic or pulsed laser irradiation rather than continuous irradiation. By delivering laser energy in controlled pulses or periodic intervals, the system achieves the necessary local heating to suppress carbon incorporation during active deposition periods while allowing cooling intervals that prevent excessive substrate temperature accumulation and potential damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach effectively suppresses the incorporation of carbon into the material, resulting in semiconductor films with lower carbon content compared to traditional methods, thereby improving the quality of nitride-based semiconductors.
Implementation Method 1
a laser beam is directed above a rotatable substrate support surface, and precursors are introduced to flow through the laser beam, enhancing the thermal decomposition and irradiation of precursors
Implementation Method 2
enhancing the thermal decomposition and irradiation of precursors to reduce carbon incorporation in the deposited material
Data Source
AI summary
Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.