Laser Modification Layer for Distortion-Controlled Substrate Bonding

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Solution Overview

Problem

In substrate bonding processes, deviations such as Scaling, Translation, Rotation, Orthogonality, and Distortion occur due to differences in crystal orientation and stress distribution in the substrate plane, leading to misalignment and quality issues in semiconductor devices.

Innovation Solution

A substrate processing method and system that includes forming a modification layer within the substrate using a laser beam to uniformize the elongation amount across the substrate plane, thereby correcting for differences in crystal orientation and suppressing Distortion during bonding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If substrate bonding is performed without modification, then bonding speed is maintained, but Distortion occurs due to differences in crystal orientation and stress distribution

Engineering Contradiction:
Improvealignment accuracyVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The modification layer is formed in advance on the rear surface of the substrate before bonding occurs. This preliminary action uniformizes the elongation characteristics of the substrate, preventing Distortion from occurring during the subsequent bonding process. The modification layer acts as a pre-applied correction that compensates for crystal orientation differences before they can cause misalignment issues.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If a modification layer is formed using laser beam, then Distortion is suppressed and alignment accuracy is improved, but processing time and energy consumption increase

Engineering Contradiction:
Improvealignment accuracyVSAvoidprocessing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

Instead of modifying the entire substrate uniformly, the modification layer is formed only on the rear surface of the substrate at specific locations. This localized approach achieves the necessary elongation uniformization to prevent Distortion while minimizing the total processing time and energy consumption compared to full-substrate modification.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If conventional bonding method is used, then process simplicity is maintained, but misalignment and quality issues occur due to Scaling, Translation, Rotation, and Distortion

Engineering Contradiction:
Improveprocess simplicityVSAvoidbonding accuracy
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The modification layer serves as an intermediary element between the substrate and the bonding process. It mediates the stress and elongation forces that occur during bonding, allowing the substrate to maintain its dimensional stability and crystal orientation consistency throughout the bonding operation, thereby preventing Scaling, Translation, Rotation, and Distortion.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively suppresses Distortion and ensures accurate bonding of substrates by uniformizing the elongation across the substrate plane, leading to improved alignment and quality of semiconductor devices.

Implementation Method 1

forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam

Methodology Applied
Scientific EffectLaser heating: Laser

Data Source

PatentUS12322599B2Substrate processing method, modification device and substrate processing system
Publication Date: 2025.06.03 TOKYO ELECTRON LTD
  • US12322599B2 patent drawing
  • US12322599B2 patent drawing
  • US12322599B2 patent drawing

AI summary

A substrate processing method of processing a substrate includes: forming a modification layer at least on a surface layer of a rear surface of the substrate or within the substrate by radiating a laser beam; and processing a front surface of the substrate in a state that the rear surface of the substrate is held. A modification device includes a laser irradiation unit configured to form a modification layer at least on a surface layer of the rear surface of the substrate or within the substrate by radiating a laser beam.