Non-Contact Semiconductor Separation via Laser-Modified Layers
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Solution Overview
Problem
The high hardness of semiconductor materials like silicon carbide (SiC) makes slicing, grinding, or polishing challenging, leading to wear on processing elements and inefficient processing.
Innovation Solution
A non-contact processing method using a laser source for modification energy to create a modified layer and a separation energy source, such as microwave or radio-frequency energy, to separate or thin the semiconductor material at the modified layer, potentially assisted by electrical discharge machining (EDM) and thermal expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional slicing, grinding, or polishing methods are used on semiconductor materials, then processing can be performed, but tool wear increases and processing efficiency decreases due to the high hardness of materials like silicon carbide
Solution Approach 1:
The patent replaces traditional mechanical slicing, grinding, and polishing methods with a non-contact processing system that uses laser beams to modify the semiconductor material structure and electromagnetic fields (microwave or radio-frequency) to separate the modified layer. This substitution eliminates direct mechanical contact between processing tools and the hard semiconductor material, thereby preventing tool wear and improving processing efficiency.
2Ease of manufacture
If mechanical processing elements are used to slice or grind semiconductor materials, then material can be processed, but the high hardness causes wear to the processing elements
Solution Approach 1:
The invention replaces mechanical processing elements (cutter, grinding wheels) with non-contact energy fields. The laser beam modifies the material structure without physical contact, and the electromagnetic field separates the modified layer, eliminating wear on processing elements while maintaining processing capability.
Solution Approach 2:
The patent changes the processing parameters from mechanical force and contact to electromagnetic energy and non-contact fields. By using laser energy to modify material properties and electromagnetic fields to separate layers, the system processes hard semiconductor materials without the wear associated with mechanical elements.
3Manufacturing precision
If conventional processing methods are used on hard semiconductor materials, then processing can be achieved, but processing quality and efficiency are compromised
Solution Approach 1:
The patent replaces mechanical processing with non-contact laser modification and electromagnetic field separation, achieving high processing quality through precise energy control and clean separation without mechanical contact, while improving efficiency by eliminating tool wear and enabling continuous processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables rapid separation or thinning of semiconductor materials with reduced wear on processing elements, allowing for improved processing efficiency and quality, and the ability to fill surface cracks, preventing unwanted crack expansion.
Implementation Method 1
a modification energy source for providing a modification energy to a processing target area of the solid structure in a modification step of the processing procedure to generate qualitative changes or defects in the processing target area of the solid structure to cause the processing target area become a modified layer, wherein the modification energy source is a laser source, the modification energy is a laser energy
Implementation Method 2
the separation energy source comprises a microwave or radio-frequency source for providing a microwave or radio-frequency energy as the separation energy
Implementation Method 3
the separation energy source comprises a microwave or radio-frequency source for providing a microwave or radio-frequency energy as the separation energy
Implementation Method 4
the separation energy source comprises an electrical discharge machining (EDM) unit for providing a discharge energy as the separation energy via at least one discharge electrode
Implementation Method 5
the thermal expansion material infiltrates into the modified layer, and the thermal expansion material is caused to expand in volume, thereby separating or thinning the solid structure at the modified layer
Data Source
AI summary
A non-contact processing device and a non-contact processing method are used to perform a processing procedure on a solid structure. The non-contact processing device of the invention uses an electromagnetic radiation source to provide energy to the solid structure to cause qualitative changes or defects in the solid structure, that is, to form a modified layer. A separation energy source is used to apply a separation energy on the solid structure with the modified layer in a non-contact manner. With stress, structural strength, lattice pattern or hardness of the modified layer being different from that of other non-processing areas, the solid structure can be rapidly separated or thinned at the modified layer.