Monolithic Laser-Nonlinear Photonic Integration

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Solution Overview

Problem

Current non-linear photonic devices require large, costly, and power-consuming systems due to the need for separate components and materials, making integration with lasers inefficient and expensive, especially with dielectric materials that have low nonlinear optical coefficients and compatibility issues with semiconductor materials.

Innovation Solution

Integration of lasers and non-linear devices on a semiconductor/dielectric substrate using high-quality factor nonlinear materials like AlGaAs, allowing for efficient frequency comb generation with reduced size, cost, and power consumption, and enabling hybrid waveguides with integrated gain sections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If separate laser and non-linear photonic devices are connected via fiber or chip-to-chip coupling, then frequency comb generation is achieved, but device size, cost and power consumption increase

Engineering Contradiction:
Improvefrequency comb generation capabilityVSAvoidsystem size and component count
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent merges the laser and non-linear photonic devices into a single integrated device fabricated on the same semiconductor substrate. The laser cavity and non-linear waveguide are co-fabricated using compatible semiconductor materials, eliminating the need for separate components and fiber/coupling connections, thereby reducing device size, cost and power consumption while maintaining frequency comb generation capability

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If dielectric materials are used for non-linear photonic devices, then non-linear optical functions are achieved, but fabrication cost increases due to strict quality factor requirements and incompatibility with semiconductor laser fabrication

Engineering Contradiction:
Improvenon-linear optical functionVSAvoidfabrication compatibility and cost
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent uses homogeneous semiconductor materials (such as AlGaAs, InP, GaAs) for both the laser active region and the non-linear waveguide section. This material homogeneity allows both components to be fabricated using the same semiconductor fabrication processes on the same substrate, eliminating the incompatibility issues and high costs associated with integrating dielectric non-linear materials with semiconductor lasers

Inventive Principle:
Principle #33Homogeneity

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in ultra-efficient frequency comb generation at low power consumption, with high nonlinear coefficients and compact designs, overcoming the limitations of traditional dielectric-based systems by simplifying fabrication and enhancing integration with active components.

Implementation Method 1

non-linear photonic devices are utilized to fabricate devices such as frequency comb (microcomb) generators, which are optical devices capable of generating very sharp and equidistant frequency lines in response to an input frequency

Methodology Applied
Scientific EffectNonlinear optical effect: Kerr Effect

Implementation Method 2

a pump laser fabricated on the same semiconductor/dielectric substrate

Methodology Applied
Scientific EffectStimulated emission: Laser

Data Source

PatentUS20220121084A1Monolithically integrated laser-nonlinear photonic devices
Publication Date: 2022.04.21 RGT UNIV OF CALIFORNIA
  • US20220121084A1 patent drawing
  • US20220121084A1 patent drawing
  • US20220121084A1 patent drawing

AI summary

An integrated laser/non-linear device includes a semiconductor/dielectric substrate, a nonlinear device fabricated on the semiconductor/dielectric substrate and a pump laser fabricated on the same semiconductor/dielectric substrate.