Surface-Emitting Laser Oxidation Protection via Groove Segmentation
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Solution Overview
Problem
Surface-emitting semiconductor laser devices face degradation due to unintended oxidation of semiconductor layers during the dicing process, leading to issues like peeling of insulating films and breaking of metal wires, especially under high-temperature, high-humidity conditions, and existing oxidation-resistant structures increase production complexity.
Innovation Solution
An oxidation-resistant structure is implemented, featuring a groove along the outer periphery of the semiconductor layer with a silicon oxynitride film covering the edge surfaces and an oxidation sacrificial region to prevent oxidation, allowing for independent formation of the oxidation-resistant groove without increasing process complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dicing process is used without oxidation-resistant structure, then production process is simple, but semiconductor layers undergo unintended oxidation leading to peeling of insulating films and breaking of metal wires
Solution Approach 1:
The oxidation-resistant structure divides the protective function into separate components: a groove structure that physically isolates the semiconductor layer edge from oxidizing environment, and an oxidation-resistant film deposited on the groove surface. This segmentation allows the protection function to be added without fundamentally changing the overall device structure, thereby improving oxidation resistance while maintaining relatively simple device complexity.
2Reliability
If oxidation-resistant structure with wide groove is used, then oxidation protection is effective, but dicing precision is compromised due to reduced effective dicing width
Solution Approach 1:
The oxidation-resistant groove is positioned specifically at the outer periphery of the semiconductor layer where oxidation occurs during dicing. By concentrating the protective structure only where needed (at the edge surfaces) rather than across the entire device area, the groove provides effective oxidation protection while minimizing the impact on the effective dicing width and maintaining dicing precision.
3Reliability
If oxidation-resistant film is deposited on groove surface, then oxidation resistance is enhanced, but additional manufacturing steps are required
Solution Approach 1:
The oxidation-resistant film deposition is merged with the existing insulating film formation process. The same insulating film material (such as silicon oxynitride) is deposited to cover both the groove surface and the upper surfaces of the semiconductor layer, combining two protective functions into a single manufacturing step. This merging approach enhances oxidation resistance while minimizing the impact on production efficiency by avoiding entirely separate processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively protects the semiconductor layers from oxidation, reducing the risk of degradation and simplifying the production process by allowing for narrower grooves and independent formation of the oxidation-resistant structure, thus maintaining device performance and reducing manufacturing complexity.
Implementation Method 1
an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove
Data Source
AI summary
Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.