Laser Peel Substrate Projections for Faster Semiconductor Transfer
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices using laser peel are inefficient in terms of throughput due to the need for multiple irradiation steps and thermal interference, which can lead to incomplete peeling and thermal damage.
Innovation Solution
The method involves forming multiple projections on the substrate in a two-dimensional fashion and using laser beams with spot areas larger than the average pitch between projections, allowing for fewer irradiation steps and improved tensile stress generation for efficient peeling, while also reducing thermal damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple irradiation steps are used to ensure complete peeling, then peeling completeness is improved, but throughput deteriorates due to increased process time
Solution Approach 1:
The substrate surface is segmented into multiple regions with different absorption characteristics (first region with higher absorption, second region with lower absorption). This allows selective and efficient energy distribution, enabling complete peeling in fewer irradiation steps while maintaining high throughput.
Solution Approach 2:
Different regions of the substrate are assigned different absorption properties tailored to their specific peeling requirements. The first region receives higher energy density for difficult-to-peel areas, while the second region receives lower energy density, optimizing overall peeling efficiency and reducing the number of required irradiation steps.
2Productivity
If higher laser energy is used to improve peeling efficiency, then throughput is improved, but thermal damage to the substrate increases
Solution Approach 1:
The laser energy distribution is localized according to regional requirements: the first region receives higher energy density to overcome strong adhesion, while the second region receives lower energy density sufficient for its weaker adhesion. This prevents excessive thermal accumulation and damage while maintaining high peeling efficiency across the entire substrate.
Solution Approach 2:
The substrate's inherent absorption characteristics are utilized to guide energy distribution. Regions with higher absorption are targeted with higher energy, converting the potential harm of thermal sensitivity into a beneficial selection criterion for optimized energy allocation, achieving efficient peeling with minimal thermal damage.
3Manufacturing precision
If smaller spot size is used to match projection pitch, then manufacturing precision is improved, but number of irradiation steps increases reducing throughput
Solution Approach 1:
The spot size and energy density are locally optimized for different regions: larger spot sizes with higher energy density are used in the first region requiring stronger peeling force, while smaller spot sizes with lower energy density are used in the second region. This regional differentiation reduces the total number of irradiation steps needed while maintaining precise control where required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the throughput of the laser peel process by reducing the number of irradiation steps and minimizing thermal damage, enabling smoother peeling and improved semiconductor device manufacturing efficiency.
Implementation Method 1
irradiation with a laser beam (laser peel)
Implementation Method 2
improved tensile stress generation for efficient peeling
Data Source
AI summary
According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method includes preparing a first substrate on which multiple projections distributed in a two-dimensional fashion are formed. The method includes stacking a first film over the multiple projections on the first substrate. The method includes stacking a second film on a second substrate. The method includes bonding a principal surface of the first film which is disposed on an opposite side of the first substrate to a principal surface of the second film which is disposed on an opposite side of the second substrate. The method includes performing irradiation with a laser beam from the first substrate. The method includes peeling the first substrate. A diameter of a spot area formed by the laser beam is larger than an average pitch between the projections arranged on the principal surface of the first substrate.