Laser-Crystallized Polysilicon Layers for Simpler Solar Cell Fabrication
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Solution Overview
Problem
The existing process for preparing solar cells is complicated due to the need to form multiple doped polysilicon layers with different degrees of crystallization, which requires multiple steps and increases the complexity of the overall process.
Innovation Solution
A method involving the formation of a doped amorphous silicon layer on a substrate, followed by multiple laser treatments to create doped polysilicon layers with varying degrees of crystallization, simplifying the process by reducing the number of steps required to form multiple layers with different properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple doped polysilicon layers with different degrees of crystallization are formed using conventional methods, then photoelectric conversion performance is improved, but the preparation process becomes complicated
Solution Approach 1:
The patent merges multiple separate preparation steps into a single laser treatment process. By controlling laser parameters (power, wavelength, pulse irradiation number) during one continuous treatment, multiple doped polysilicon layers with different crystallization degrees are formed simultaneously, eliminating the need for multiple separate preparation steps while maintaining the required photoelectric conversion performance
Solution Approach 2:
The patent applies parameter changes by systematically varying laser treatment parameters (power ranging from 150-500 mJ/cm², wavelength from 250-600 nm, pulse irradiation number from 1-300 times) to control the crystallization degree of different polysilicon layers. This allows precise control over layer properties while using a single unified process, resolving the contradiction between performance and process complexity
2Manufacturing precision
If multiple separate preparation steps are used to form doped polysilicon layers, then layer quality is improved, but productivity decreases
Solution Approach 1:
The patent implements continuity of useful action by performing laser treatment in a single continuous operation rather than multiple discrete steps. The laser beam continuously irradiates the doped amorphous silicon layer while parameters are adjusted during the process, maintaining uninterrupted processing and improving productivity without compromising layer quality
Solution Approach 2:
The patent uses periodic action through pulsed laser irradiation (1-300 pulses) with controlled timing and intervals. This periodic treatment allows precise control over crystallization while maintaining a streamlined single-step process, thereby improving both layer quality and production efficiency compared to continuous multi-step methods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the solar cell preparation process, facilitates mass production, and enhances photoelectric conversion performance by allowing different doped polysilicon layers to play specific roles, thereby improving the overall efficiency of the solar cell.
Implementation Method 1
performing laser treatment N times on the doped amorphous silicon layer to form N doped polysilicon layers
Implementation Method 2
a grain size of the nth doped polysilicon layer is larger than a grain size of the (n-1)th doped polysilicon layer
Implementation Method 3
doped with conductive ions to form an energy band bending on a surface of the substrate, thereby playing a field passivation effect on minority carriers
Data Source
AI summary
The present application relates to the technical field of solar cells, and in particular, to a method for preparing a solar cell, the solar cell, and a photovoltaic module. The method for preparing the solar cell includes: providing a substrate; forming a doped amorphous silicon layer on the first side of the substrate; performing laser treatment N times on the doped amorphous silicon layer to form N doped polysilicon layers ranging from a first doped polysilicon layer to a Nth doped polysilicon layer stacked in a direction away from the substrate, where N>1, a power, a wavelength and a pulse irradiation number of a nth laser treatment are respectively smaller than a power, a wavelength and a pulse irradiation number of a (n-1)th laser treatment, where n≤N, and the first doped polysilicon layer is disposed closer to the substrate than the Nth doped polysilicon layer. The embodiments of the present application are conducive to simplify the process of forming the solar cell.