Semiconductor Laser Recess Layout for Crack-Controlled Splitting
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Solution Overview
Problem
Semiconductor laser elements made from nitride-based materials are prone to cracking during the splitting process, which reduces their reliability due to defects such as splitting away from planned split lines or partial chipping, especially when using guide recesses formed by laser light irradiation.
Innovation Solution
The semiconductor laser element incorporates a substrate with a semiconductor stacked structure featuring optical waveguides, first and second recesses, and a ridge portion, where the second recesses are formed between the optical waveguide and the first recesses to prevent cracks from advancing, and a wing portion is provided on either side of the ridge portion to reduce stress, along with a projection on the end edge to enhance mounting and reduce stress-related issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If guide recesses are formed by laser light irradiation to enable splitting, then the splitting process can be guided, but cracks still occur during splitting reducing reliability
Solution Approach 1:
The patent forms protective recesses in the semiconductor stacked structure before the splitting process. These recesses are created by laser irradiation to concentrate stress at specific locations, preventing crack propagation during subsequent splitting operations. The recesses are positioned to intercept potential cracks before they can reach critical areas.
Solution Approach 2:
The protective recesses act as stress concentration zones that absorb and redirect mechanical stress during splitting. By pre-forming these recesses, the patent creates a cushioning effect that prevents cracks from propagating through the semiconductor layers, thereby protecting the integrity of the laser element during the splitting process.
2Adaptability or versatility
If splitting is performed along non-cleavage crystal faces in nitride-based semiconductors, then manufacturing flexibility is improved, but defects such as splitting away from planned split lines or partial chipping occur
Solution Approach 1:
The patent introduces localized structural modifications in the form of protective recesses at specific positions within the semiconductor stacked structure. These recesses are strategically placed to influence stress distribution only in critical areas, allowing precise control over crack propagation paths without affecting the overall flexibility of the splitting process.
Solution Approach 2:
The protective recesses serve as intermediary structures that mediate between the applied mechanical stress and the semiconductor crystal structure. By introducing these intermediate features, the patent enables controlled stress concentration that guides crack propagation along desired paths, improving split line accuracy while maintaining manufacturing flexibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents cracks from reaching the ridge portion during splitting, thereby enhancing the reliability and manufacturing consistency of nitride-based semiconductor laser elements by reducing defects and improving the straightness of the splitting process.
Implementation Method 1
forming split recesses by irradiating a back face of the wafer with laser light
Data Source
AI summary
A semiconductor laser element includes a substrate and a semiconductor stacked structure that is provided on one face of the substrate. The semiconductor stacked structure includes an optical waveguide. A pair of first recesses are provided in an other face of the substrate, the pair of first recesses extending in the resonator length direction. Both end portions of each of the pair of first recesses are located in positions recessed from end faces of the semiconductor stacked structure. Second recesses are provided in the semiconductor stacked structure, the second recesses extending from the end faces of the semiconductor stacked structure in the resonator length direction. In a top view, the second recesses are provided on both sides of the optical waveguide, and are each provided between a corresponding one of the pair of first recesses and the optical waveguide.