Surface-Emitting Laser Resonator Offset for Wider Modulation Band
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Solution Overview
Problem
Existing surface emitting semiconductor lasers face limitations in expanding the modulation band of light due to fixed resonator lengths and shapes, which restrict their performance under varying environmental conditions.
Innovation Solution
A configuration where a metal layer is positioned between a second semiconductor multilayer film reflective mirror and a dielectric multilayer film reflective mirror, with an opening in the metal layer having a center shifted from the aperture's center, allowing for varied resonator lengths and shapes, thereby expanding the modulation band.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the opening of the metal layer is positioned to coincide with the aperture of the current confinement layer, then the structure is simple and easy to manufacture, but the modulation band of light is limited
Solution Approach 1:
The patent applies asymmetry by deliberately positioning the opening of the metal layer at a location that does not coincide with the aperture of the current confinement layer. This asymmetric arrangement creates multiple resonators with different resonance frequencies, thereby expanding the modulation band of light while maintaining manufacturing feasibility through standard lithographic alignment processes.
Solution Approach 2:
The patent segments the optical resonator into multiple distinct resonators by introducing the metal layer with an offset opening. This segmentation creates independent resonant modes with different frequencies, allowing the system to operate across a broader modulation band while keeping each individual resonator structure simple to manufacture.
2Device complexity
If the resonator length and shape are fixed, then the device structure is simple, but the performance under varying environmental conditions is restricted
Solution Approach 1:
The patent introduces dynamic characteristics by creating multiple resonators with different lengths and shapes within a single device. This allows the system to adapt to varying environmental conditions such as temperature changes and driving current variations, as different resonators can be optimized for different operating conditions while maintaining overall structural simplicity.
Solution Approach 2:
The patent employs parameter changes by varying the lengths and shapes of multiple resonators created by the metal layer configuration. This enables the system to maintain optimal performance across different environmental conditions by utilizing resonators with different resonant frequencies, without significantly increasing device complexity.
3Device complexity
If a single resonator configuration is used, then the device structure is simple, but multiple resonance frequencies cannot be achieved
Solution Approach 1:
The patent merges multiple resonators into a single integrated device structure by using a metal layer with an offset opening that creates multiple resonant cavities within one continuous structure. This approach achieves multiple resonance frequencies while avoiding the complexity of separate discrete resonator devices, effectively combining multiple functions in a unified structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the modulation band of light by forming multiple resonators with different resonance frequencies, improving performance under changing conditions such as temperature and driving current.
Implementation Method 1
having a center of the opening at a position shifted from a center of the aperture... forming multiple resonators with different resonance frequencies
Data Source
AI summary
A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer film reflective mirror stacked on the substrate; an active layer stacked on the first semiconductor multilayer film reflective mirror; a second semiconductor multilayer film reflective mirror that includes a current confinement layer and is stacked on the active layer; a dielectric multilayer film reflective mirror stacked on the second semiconductor multilayer film reflective mirror; and a metal layer that is disposed between the second semiconductor multilayer film reflective mirror and the dielectric multilayer film reflective mirror, has an opening in which an aperture representing a portion that is not subjected to oxidation confinement in the current confinement layer is disposed inside as viewed from a stacking direction, and has a center of the opening at a position shifted from a center of the aperture.


