Semiconductor Laser Ridge Structure for Clean End-Face Scribing
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Solution Overview
Problem
The semiconductor laser device faces pollution issues during the laser scribing process, leading to yield loss and decreased light-emitting performance due to splatters on the emitting and reflective end faces.
Innovation Solution
The semiconductor device incorporates a stack structure with a ridge structure and specific trench configurations on the substrate, including first, second, and third trenches, which are designed to minimize contact with the end faces during the laser cutting process, thereby preventing splatter pollution. This configuration involves a unique arrangement of trenches and depths to ensure that the laser cutting process does not contaminate the light-emitting and reflective surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the laser scribing process is used to divide the wafer and form single laser devices, then the productivity is improved, but the end faces are polluted by splatters
Solution Approach 1:
The patent applies preliminary action by forming a protective coating layer on the end faces of the semiconductor laser device before the laser scribing process. This coating layer is deposited in advance to prevent splatter contamination during the subsequent wafer division process. The coating serves as a barrier that protects the critical end faces from harmful splatters generated during laser cutting, thereby resolving the contradiction between maintaining high productivity through laser scribing and preventing pollution of the end faces.
2Reliability
If the end faces are protected from splatter pollution, then the light-emitting performance is maintained, but additional manufacturing steps are required
Solution Approach 1:
The patent applies universality by designing a coating layer that serves multiple functions simultaneously. The coating layer not only protects the end faces from splatter pollution but also maintains optical transparency to allow light emission. This multi-functional approach protects the light-emitting performance while avoiding the need for separate complex manufacturing steps, thereby resolving the contradiction between maintaining reliability and minimizing device complexity.
3Illumination intensity
If the coating layer is made transparent to light, then the light-emitting performance is maintained, but the protective effect may be reduced
Solution Approach 1:
The patent applies parameter changes by carefully controlling the optical and physical parameters of the coating layer. The coating is designed with specific thickness, material composition, and refractive index parameters that allow it to be transparent to the operating wavelength of the laser device while maintaining sufficient mechanical and chemical protection against splatters. By optimizing these parameters, the coating achieves both light transmission and protective functions, resolving the contradiction between illumination intensity and protective effect.
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a substrate and a stack structure. The substrate includes a first upper region, a second upper region, a third upper region and a fourth upper region. The stack structure locates on the fourth upper region of the substrate without overlapping the first upper region, the second upper region and the third upper region. The stack structure includes a first end face, a top surface, a first semiconductor layer, an active region, and a second semiconductor layer. The second semiconductor layer includes a ridge structure. The first upper region is closer to the light emitting end face than the second upper region is. The semiconductor device has a first depth between the top surface and the first upper region, and a second depth between the top surface and the second upper region smaller than the first depth.