Semiconductor Laser Ridge Structure for Leakage Current Reduction
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Solution Overview
Problem
The existing semiconductor laser devices experience significant leakage currents due to large cross-sectional areas of hole and electron leakage paths, which are not effectively mitigated by current blocking layers, leading to increased electrical losses.
Innovation Solution
The semiconductor laser device incorporates current blocking layers with a semi-insulating blocking layer, an intermediate blocking layer having a higher energy level at the conduction band bottom compared to the semi-insulating blocking layer, and a p-type clad layer formed on the ridge, with the upper-side light confinement layer as the uppermost layer, reducing leakage currents by minimizing the leakage path area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the cross-sectional area of the leakage path is reduced, then the leakage current decreases, but the device complexity increases
Solution Approach 1:
The current blocking layer is divided into three distinct segments: semi-insulating blocking layer, intermediate blocking layer, and n-type blocking layer. Each segment performs a specific function in blocking different charge carriers, allowing simultaneous reduction of both hole and electron leakage currents through coordinated action of the segmented structure.
Solution Approach 2:
Different regions of the current blocking layer are assigned different material properties and doping types optimized for their specific functions: the upper semi-insulating layer for hole blocking, the intermediate layer for electron barrier, and the lower n-type layer for electron blocking and field effect. This local optimization reduces overall leakage current while managing structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces leakage currents by minimizing the cross-sectional area of the leakage paths, thereby enhancing the device's electrical efficiency and reducing electron and hole leakage, while maintaining optical output.
Implementation Method 1
the intermediate blocking layer has a higher energy level at a bottom of a conduction band of the intermediate blocking layer compared to the semi-insulating blocking layer
Implementation Method 2
the current blocking layers each having a semi-insulating blocking layer covering a side surface of the ridge
Data Source
AI summary
A semiconductor laser device includes: a ridge having an n-type clad layer, a lower-side light confinement layer, an active layer, and an upper-side light confinement layer which are laminated in this order from a lower side; current blocking layers embedded on both sides of the ridge, the current blocking layers each having a semi-insulating blocking layer covering a side surface of the ridge, an intermediate blocking layer, and an n-type blocking layer which are laminated in this order from the lower side; and a p-type clad layer formed on the ridge and the current blocking layers, in which the ridge has the upper-side light confinement layer as an uppermost layer of the ridge, and the intermediate blocking layer has a higher energy level at a bottom of a conduction band of the intermediate blocking layer compared to the semi-insulating blocking layer.