Continuous Laser Scanning for Wider Wafer Dicing Trajectories
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Solution Overview
Problem
Current laser cutting modules for semiconductor wafer dicing, particularly in the silicon carbide (SiC) industry, face inefficiencies due to the use of a single light spot for linear modification processing, which limits overall cutting efficiency and is difficult to significantly improve.
Innovation Solution
A continuous laser processing system and method that utilizes a pulse laser device, a scanning device, a processing platform, and a control device to simultaneously control the scanning speed of the laser beam and the translation speed of the processing platform, creating a dense periodic processing trajectory on the semiconductor material, effectively increasing the processing width and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single light spot is used for linear modification processing, then the processing method is simple, but the overall cutting efficiency is low and processing width is limited
Solution Approach 1:
The patent divides the processing into two independent but coordinated motions: (1) the scanning device creates periodic processing trajectories along the cutting direction by rapidly moving the laser beam, and (2) the processing platform translates the material perpendicular to the scanning direction. This segmentation of motions allows the scanning device to operate at high speed (at least 20 times faster than platform translation) to create multiple stress concentration points, while the platform provides steady material feed, thereby increasing cutting efficiency without requiring the entire system to operate at high speed
Solution Approach 2:
The scanning device performs periodic scanning motions to create a series of equally spaced processing trajectories on the material. The laser beam is rapidly scanned back and forth along the cutting direction, creating periodic stress concentration points at regular intervals. This periodic action transforms the single light spot limitation into an advantage by generating multiple modification points that facilitate easier and faster cutting through cumulative stress effects
2Productivity
If the scanning speed is increased to improve processing efficiency, then the processing width increases, but the coordination between scanning device and processing platform becomes more difficult
Solution Approach 1:
The control device receives real-time position feedback from both the scanning device and the processing platform, and dynamically adjusts their speeds to maintain the required 20:1 scanning-to-translation speed ratio. This feedback mechanism ensures that even when the scanning device operates at very high speeds to increase processing width, the system maintains precise coordination by continuously monitoring and adjusting velocities, thereby resolving the coordination difficulty while preserving high productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The continuous laser processing system significantly enhances processing efficiency by increasing the processing width of a single trajectory to hundreds of micrometers, reducing the overall processing length, and improving the quality of wafer dicing by generating multiple stress concentration points, thereby reducing the force required for subsequent slitting and surface roughness.
Implementation Method 1
a pulse laser device configured to output a laser beam
Implementation Method 2
The scanning device includes a mirror group controller and a mirror group controlled to guide the laser beam to the transparent material, wherein the mirror group is disposed at an output path of the laser beam
Implementation Method 3
generating multiple stress concentration points, thereby reducing the force required for subsequent slitting
Data Source
AI summary
A continuous laser processing system for internal modification of transparent materials includes a pulse laser device, a scanning device, a processing platform and a control device. The pulse laser device is configured to output a laser beam. The scanning device includes a mirror group controller and a mirror group and controlled to guide the laser beam to the transparent material, wherein the mirror group is disposed at an output path of the laser beam. The processing platform is configured to carry the transparent material and controlled to move. The control device is electrically connected to the scanning device and the processing platform, and is configured to control the scanning device to form a processing trajectory at the transparent material at a scanning speed, and to control the processing platform to move at a translation speed, wherein the scanning speed is at least 20 times the translation speed.