Laser Separation of Semiconductor Elements from Glass Substrates
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Solution Overview
Problem
Conventional methods for manufacturing flexible display devices face challenges in easily separating semiconductor elements from glass substrates, particularly in large-area substrates, leading to complex processes and reduced yield due to the difficulty in exposing terminal electrodes and connecting external terminals effectively.
Innovation Solution
A method involving the formation of an oxide layer on a light-transmitting substrate, a metal layer, and a resin layer, followed by irradiation with laser light through the substrate to separate the glass substrate, allowing for the exposure of the metal layer as a terminal electrode and facilitating the connection of external terminals, while using a separation apparatus with a support body supply unit, direction changing mechanism, and substrate side surface treatment unit to manage the process efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional separation methods are used for large-area glass substrates, then the separation process becomes complex and yield decreases, but using the proposed laser irradiation method through the light-transmitting substrate enables easy and efficient separation while exposing terminal electrodes
Solution Approach 1:
The patent replaces conventional mechanical or chemical separation methods with laser irradiation through the light-transmitting substrate. The laser energy selectively modifies the bonding interface between the glass substrate and semiconductor elements, enabling clean separation without complex mechanical procedures. This substitution of mechanical/chemical processes with optical energy achieves simpler, more efficient separation while exposing terminal electrodes for external connections
Solution Approach 2:
The patent utilizes the light-transmitting property of the glass substrate as a key parameter change. By selecting a substrate with specific optical transparency characteristics, the laser can penetrate through the substrate to precisely target and modify the bonding layer underneath. This parameter change (optical transparency) enables the separation process to be controlled through optical means rather than mechanical force, resolving the contradiction between ease of manufacture and process complexity
2Ease of operation
If the metal layer is not exposed after separation, then external terminals cannot be connected effectively, but the separation process may leave the metal layer covered requiring additional processing steps
Solution Approach 1:
The laser irradiation process performs preliminary action by precisely controlling the separation depth and location to automatically expose the metal layer at the bonding interface. The laser energy is calibrated to remove or modify only the bonding layer without damaging the underlying metal terminal electrodes. This preliminary, precisely controlled separation action ensures that terminal electrodes are exposed and ready for external connection immediately after separation, eliminating the need for additional metal exposure processing steps and maintaining high manufacturing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables easy and efficient separation of semiconductor elements from glass substrates, reducing process complexity and improving yield by ensuring the metal layer is exposed and accessible for external connections, thus facilitating the production of compact flexible display devices.
Implementation Method 1
a method in which a light-transmitting substrate, an oxide layer, a metal layer, and a resin layer are stacked in this order, and the light-transmitting substrate is separated by being irradiated with laser light
Implementation Method 2
the light-transmitting substrate is separated by being irradiated with laser light
Data Source
AI summary
A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.