Laser Source Device for EUV Lithography
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Solution Overview
Problem
Current semiconductor fabrication processes face challenges in achieving high-resolution lithography due to the complexity of processing and manufacturing integrated circuits, particularly in producing extremely small patterns on semiconductor wafers, which existing lithography techniques like EUV lithography struggle to address effectively.
Innovation Solution
A device comprising a laser source, amplifier, optical sensor, spectrometer, and extreme ultraviolet generating vessel is used to produce and amplify a seed laser beam, which is then directed to excite a target droplet in the EUV generating vessel to produce extreme ultraviolet light with a wavelength of 5-100 nm, enabling precise pattern formation on semiconductor wafers through EUV lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV lithography is used to achieve higher resolution, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The laser system is divided into multiple independent amplifier stages (first amplifier, second amplifier, third amplifier) that sequentially process the laser beam. Each amplifier stage can be independently optimized and controlled, allowing the complex EUV lithography system to be managed through modular, segmented components rather than a monolithic complex system.
Solution Approach 2:
The laser beam undergoes multiple preliminary amplification stages before reaching the EUV generation target. The first amplifier performs initial amplification, the second amplifier further amplifies the beam, and the third amplifier prepares the final high-intensity beam for EUV generation. This preliminary action sequence ensures the laser is fully prepared before the critical EUV generation step, improving overall system reliability and precision.
2Illumination intensity
If multiple amplifier stages are used to increase laser intensity, then EUV light intensity is improved, but device complexity increases
Solution Approach 1:
The amplification process is segmented into three distinct amplifier stages, each with its own gain medium and control mechanisms. This segmentation allows each amplifier to be designed and optimized for specific intensity requirements, making the overall high-intensity EUV generation achievable through manageable, modular stages rather than requiring a single overly complex amplifier.
Solution Approach 2:
The laser beam itself serves as an intermediary carrier that transfers energy through multiple amplifier stages. Each amplifier stage uses the laser beam as a mediator to transfer and amplify energy sequentially, allowing the system to build up EUV-intense light through controlled intermediate steps rather than direct generation, thereby managing complexity while achieving high intensity.
3Productivity
If high-power laser amplification is performed, then EUV generation efficiency is improved, but energy loss increases
Solution Approach 1:
The laser beam undergoes preliminary amplification in the first and second amplifiers before reaching the third amplifier and EUV generation target. This staged preliminary action ensures that energy is efficiently transferred and amplified in controlled increments, minimizing energy loss by avoiding the need for a single high-power amplification step that would be less efficient and generate more heat and energy dissipation.
Solution Approach 2:
The multi-stage amplifier system maintains continuous useful action by keeping the laser beam in a state of controlled amplification through each stage. The gain media in each amplifier are continuously pumped and the laser beam continuously passes through, ensuring that energy conversion remains efficient throughout the process rather than having idle or loss-generating intermediate states.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the resolution and efficiency of lithography processes by generating high-intensity EUV light, allowing for the formation of extremely small patterns on semiconductor wafers, thereby improving the complexity and precision of semiconductor fabrication.
Implementation Method 1
A laser source is disclosed
Implementation Method 2
The amplifier includes a gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam
Implementation Method 3
The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier
Implementation Method 4
The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission
Data Source
AI summary
A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.