Semiconductor Laser Stem Layout for Shorter Heat Dissipation Paths

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Solution Overview

Problem

Semiconductor laser devices face challenges in maintaining constant temperature characteristics across a wide temperature range due to inefficient heat dissipation, especially when high light output is required, as the CAN package-type stem configuration hinders effective heat discharge.

Innovation Solution

A semiconductor laser device design featuring a thermoelectric element offset from the stem center, combined with a heat dissipation block having multiple portions that increase contact area and shorten heat dissipation paths, including lead pins around the heat dissipation block to enhance thermal conductivity and reduce insulator interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a CAN package using a stem is applied to reduce cost, then manufacturing cost is reduced, but heat dissipation becomes difficult due to the stem shape

Engineering Contradiction:
Improvemanufacturing costVSAvoidheat dissipation efficiency
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The heat dissipation block extends in multiple spatial dimensions (length, width, height) to create extensive contact surfaces with the stem. The block's multi-portion structure utilizes three-dimensional space efficiently, maximizing contact area without increasing overall package size, thereby improving heat dissipation while maintaining the compact CAN package format.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The heat dissipation block is made of a material with higher thermal conductivity than the stem material. This composite approach combines the stem's structural advantages with the heat dissipation block's superior thermal properties, allowing efficient heat transfer from the stem to the block and then to the surrounding environment.

Inventive Principle:
Principle #40Composite materials

2Productivity

If high light output is requested to increase productivity, then light output is improved, but heat generation increases making temperature control more difficult

Engineering Contradiction:
Improvelight outputVSAvoidtemperature control stability
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The heat dissipation block serves as a thermal intermediary between the heat-generating semiconductor laser and the external environment. It provides a low-thermal-resistance pathway for heat to flow from the laser through the block to the surroundings, enabling high light output while maintaining temperature control through enhanced heat evacuation.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Shape

If the thermoelectric element is positioned at the center of the stem, then structural symmetry is maintained, but heat dissipation path length increases

Engineering Contradiction:
Improvestructural symmetryVSAvoidheat dissipation path length
Core Design Contradiction:
ShapeVSLength of stationary object

Solution Approach 1:

The heat dissipation block is positioned asymmetrically relative to the stem center, optimized to maximize contact area and minimize heat dissipation path length. This asymmetric placement allows the block to extend toward regions of the stem that are most effective for heat evacuation, improving thermal performance while the overall device maintains functional symmetry through the offset configuration.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration achieves improved heat dissipation characteristics by securing a larger contact area and reducing heat resistance, allowing for efficient heat transfer and maintaining temperature stability across varying environmental conditions.

Implementation Method 1

a thermoelectric element provided at a position shifted to one side from a center of the stem, on an upper surface of the stem; a semiconductor laser configured to be temperature-controlled by the thermoelectric element

Methodology Applied
Scientific EffectPeltier effect: Peltier Effect

Implementation Method 2

a heat dissipation block including a first portion, a second portion, and a third portion... the heat dissipation path from the thermoelectric element to the side surface of the stem can be shortened

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240405508A1Semiconductor laser device
Publication Date: 2024.12.05 MITSUBISHI ELECTRIC CORP
  • US20240405508A1 patent drawing
  • US20240405508A1 patent drawing
  • US20240405508A1 patent drawing

AI summary

A semiconductor laser device includes a stem; a thermoelectric element provided at a position shifted to one side from a center of the stem, on an upper surface of the stem; a semiconductor laser configured to be temperature-controlled by the thermoelectric element; a heat dissipation block including a first portion, a second portion, and a third portion, the first portion being at least partially provided on a rear surface on a side opposite to the upper surface of the stem, the second portion being provided on the rear surface of the stem and extending from the first portion to just below the thermoelectric element, the third portion being provided on the one side on a side surface of the stem; and a plurality of lead pins provided around the second portion and penetrating through the stem from the upper surface to the rear surface.