Semiconductor Laser Metal Stem Protrusion Heat Dissipation
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Solution Overview
Problem
Conventional semiconductor laser devices with Peltier elements and thermistors have complex configurations and large sizes due to the need for separate power supply units, which complicates heat dissipation and reliability at high temperatures.
Innovation Solution
A semiconductor laser device with a metal stem featuring a protrusion portion that increases heat dissipation surface area and bonding area, using a copper-based metal stem and a sub-mount of AlN or SiC to efficiently dissipate heat from the semiconductor laser element, eliminating the need for a cap and simplifying the configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a Peltier element and thermistor are provided to suppress temperature rise, then heat dissipation characteristic is improved, but device complexity and size increase due to separate power supply unit
Solution Approach 1:
The patent merges the heat dissipation function directly into the metal stem structure by forming a protrusion portion that integrates the heat dissipation surface. This eliminates the need for separate Peltier elements, thermistors, and power supply units, thereby reducing device complexity while maintaining effective heat dissipation.
Solution Approach 2:
The metal stem is designed to perform multiple functions: it holds the semiconductor laser element, provides electrical connection through leads, and dissipates heat through the protrusion portion. This multi-functional design eliminates the need for separate dedicated heat dissipation components.
2Temperature
If a Peltier element and thermistor are provided to suppress temperature rise, then heat dissipation characteristic is improved, but device size increases
Solution Approach 1:
The heat dissipation function is merged into the metal stem structure itself through the protrusion portion, eliminating the need for separate heat dissipation components and their associated power supply units, thereby reducing overall device size.
Solution Approach 2:
The protrusion portion extends upward from the reference surface of the base, utilizing the vertical dimension to increase heat dissipation surface area without expanding the horizontal footprint of the device, thus maintaining compact size while improving heat dissipation.
3Temperature
If heat dissipation surface area is increased through protrusion portion, then heat dissipation characteristic is improved, but manufacturing complexity increases
Solution Approach 1:
The invention changes the geometric parameters of the metal stem by adding a protrusion portion with specific dimensions (height, width, depth) to increase heat dissipation surface area. This geometric modification can be achieved through standard metalworking processes without fundamentally changing the manufacturing approach.
Solution Approach 2:
The metal stem is formed of copper-based metal which combines excellent thermal conductivity with good machinability. This material selection enables effective heat dissipation while maintaining ease of manufacturing through conventional metal forming and machining processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances heat dissipation characteristics, suppresses temperature rise, and maintains high reliability with a simpler configuration, allowing for effective heat management without the need for additional power supply units.
Implementation Method 1
a metal stem that holds the semiconductor laser element... formed of a copper-based metal... efficiently dissipate heat from the semiconductor laser element
Implementation Method 2
a sub-mount of AlN or SiC to efficiently dissipate heat from the semiconductor laser element
Data Source
AI summary
In a semiconductor laser device that includes: a semiconductor laser element that outputs light from an output portion; and a metal stem that holds the semiconductor laser element, the metal stem includes a base that has a reference surface on an upper surface and a protrusion portion that protrudes upward from the reference surface, and the protrusion portion is provided with an installation surface on which the semiconductor laser element is installed and a side surface which is disposed on an identical plane with a part of an outer circumferential surface of the base.


