Semiconductor Laser Submount Bonding for Side-Face Heat Dissipation
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Solution Overview
Problem
Existing semiconductor laser devices face challenges in dissipating heat effectively from the side faces, making it difficult to operate uncooled over a wide temperature range of −40° C. to 95° C.
Innovation Solution
The semiconductor laser device incorporates a submount with a bottom plate part and a projecting part, where the semiconductor laser is bonded to both the side face and rear surface, using a bonding member that extends further in the z-direction than the semiconductor substrate, enhancing heat dissipation through the projecting part and bottom plate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the semiconductor laser is connected to the bottom surface and side faces in the depressed part of the submount, then the structure is simplified, but the heat dissipation from side faces is insufficient
Solution Approach 1:
The invention transitions from a two-dimensional connection (bottom surface only) to a three-dimensional connection by adding side face bonding. The bonding member extends not only horizontally to connect the bottom surface but also vertically to connect the side faces, creating a multi-dimensional heat dissipation pathway that simultaneously simplifies the overall structure while dramatically improving heat dissipation efficiency.
Solution Approach 2:
The bonding member is designed with a nested structure where one end connects to the bottom surface and the other end extends to connect the side faces. This nested configuration allows the bonding member to serve dual functions: electrical connection at the bottom and thermal dissipation at the side faces, thereby simplifying the device structure while achieving comprehensive heat dissipation.
2Reliability
If the second electrode is narrowed by being interposed between projecting parts, then the insulation is improved, but the heat dissipation path from rear surface is restricted
Solution Approach 1:
The bonding member acts as an intermediary element that bridges the narrowed second electrode and the submount. Even though the second electrode is constricted for insulation purposes, the bonding member provides an extended thermal pathway that compensates for the reduced electrode width, maintaining effective heat dissipation from the rear surface to the submount through this intermediary structure.
Solution Approach 2:
The bonding member extends in the vertical dimension beyond the narrowed second electrode, creating a three-dimensional heat dissipation pathway. This vertical extension compensates for the horizontal constriction of the electrode, allowing heat to dissipate effectively despite the insulation-required narrowing of the second electrode.
3Loss of energy
If the bonding member end part is located further away in the z-direction than the semiconductor substrate surface, then the heat dissipation from side faces is enhanced, but the bonding complexity increases
Solution Approach 1:
The bonding member is designed as a multi-functional element that simultaneously provides electrical connection, mechanical bonding, and thermal dissipation functions. By extending the bonding member beyond the semiconductor substrate surface, it achieves multiple objectives: maintaining electrical connectivity at the bottom, enhancing side face heat dissipation, and providing structural support, thereby reducing the need for additional separate components.
Solution Approach 2:
The invention merges the electrical connection function and thermal dissipation function into a single bonding member structure. The bonding member's extension beyond the substrate surface combines the roles of electrical conductor and heat sink, eliminating the need for separate bonding structures and thereby reducing overall device complexity despite the enhanced heat dissipation capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for improved heat dissipation from the semiconductor laser to the submount, enabling uncooled operation over a wide temperature range of −40° C. to 95° C., even with high light output and power consumption.
Implementation Method 1
heat dissipation from the semiconductor laser to the submount
Data Source
AI summary
A semiconductor laser device includes a submount having a bottom plate part and a projecting part projecting from a surface of the bottom plate part, and a semiconductor laser bonded to the submount. The semiconductor laser includes a semiconductor substrate, a semiconductor structure part that is formed on the semiconductor substrate and has an active layer, a first electrode, and a second electrode. A side face of the semiconductor laser facing the projecting part, and the second electrode thereof are respectively bonded to the projecting part facing the semiconductor laser and the bottom plate part with a bonding member. The bonding member for bonding the projecting part and the side face of the semiconductor laser is such that an end part thereof in a z-direction in which the projecting part projects is located further away in the z-direction than a surface of the semiconductor substrate of the semiconductor laser.