Laser-Guided Substrate Treatment for Pattern Line Width Uniformity
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Solution Overview
Problem
Existing substrate treatment processes face challenges in achieving uniform line widths of patterns on substrates, leading to inefficiencies in inspection and etching processes, which can result in over-etching and prolonged correction times.
Innovation Solution
A substrate treating apparatus and method that utilizes a support unit, a liquid supply unit, a heating unit with a laser module, and an image module to accurately locate reference marks on the substrate, allowing precise irradiation of laser light to correct line widths and ensure uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching is performed to make the line widths of the monitoring pattern and the anchor pattern the same, then the line width uniformity is improved, but over-etching occurs leading to excessive removal of material
Solution Approach 1:
The patent applies different etching conditions to different regions of the mask. Specifically, the monitoring pattern and anchor pattern are etched with different etching rates by controlling the exposure dose during photolithography, allowing each pattern type to achieve its target line width without over-etching. This local differentiation resolves the contradiction by enabling precise line width control for each pattern while avoiding excessive material removal.
Solution Approach 2:
The patent performs preliminary etching of the monitoring pattern and anchor pattern before the final pattern formation. By pre-establishing these reference patterns with controlled line widths through selective etching, the system creates a foundation for accurate line width correction in subsequent steps, preventing over-etching while achieving uniformity.
2Loss of substance
If the etching process is performed precisely to minimize over-etching, then material loss is reduced, but the etching process time increases
Solution Approach 1:
The patent performs preliminary etching of the monitoring pattern and anchor pattern before final pattern formation. By pre-establishing these reference patterns with controlled line widths through selective etching, the system creates a foundation for accurate line width correction in subsequent steps, preventing over-etching while achieving uniformity.
Solution Approach 2:
The patent replaces traditional mechanical measurement and adjustment methods with optical-based laser line width correction. The system uses laser irradiation to directly measure and correct line widths of the monitoring and anchor patterns, eliminating the need for time-consuming manual inspection and iterative etching adjustments.
3Manufacturing precision
If the line widths of the monitoring pattern and the anchor pattern are made the same through additional etching, then manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The patent applies different etching conditions to different regions of the mask. Specifically, the monitoring pattern and anchor pattern are etched with different etching rates by controlling the exposure dose during photolithography, allowing each pattern type to achieve its target line width without over-etching. This local differentiation resolves the contradiction by enabling precise line width control for each pattern while avoiding excessive material removal.
Solution Approach 2:
The patent replaces traditional mechanical measurement and adjustment methods with optical-based laser line width correction. The system uses laser irradiation to directly measure and correct line widths of the monitoring and anchor patterns, eliminating the need for time-consuming manual inspection and iterative etching adjustments.
4Measurement precision
If traditional inspection methods are used to inspect all patterns on the mask, then measurement precision is maintained, but inspection time increases
Solution Approach 1:
The patent extracts the inspection function from the traditional comprehensive pattern inspection method. Instead of inspecting all patterns on the mask, the system focuses inspection only on the monitoring pattern and anchor pattern, which serve as representative samples. This extraction approach maintains measurement precision for critical patterns while dramatically reducing overall inspection time.
Solution Approach 2:
The patent uses the monitoring pattern and anchor pattern as representative copies that reflect the quality of all patterns on the mask. By ensuring these reference patterns have correct line widths through laser correction, the system infers that all other patterns will also have acceptable line widths, eliminating the need for exhaustive inspection of every pattern.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus efficiently treats substrates by minimizing deviations in line widths, enhancing precision in pattern inspection and etching, thereby reducing over-etching and shortening processing times.
Implementation Method 1
heating the substrate by irradiating laser light to the pattern on the substrate, to which the treatment liquid is applied
Data Source
AI summary
Disclosed is a method for treating a substrate, on which a plurality of reference marks and a pattern are formed. The method includes a process preparing operation, a location information acquiring operation of acquiring information on an actual location of the pattern, and a process executing operation of supplying a treatment liquid to the substrate, and heating the substrate by irradiating laser light to the pattern on the substrate, to which the treatment liquid is applied, the location information acquiring operation includes acquiring information on actual locations of, among the plurality of reference marks, at least three reference marks, and acquiring information of the actual location of the pattern through the information of the actual locations of the reference marks.