Laser Substrate Heating for Uniform Pattern Line Widths
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Solution Overview
Problem
Existing substrate treating processes face challenges in achieving uniform line widths of patterns on substrates, requiring time-consuming inspections and corrections to minimize over-etching, which affects the precision and efficiency of semiconductor manufacturing.
Innovation Solution
A substrate treating apparatus and method that utilizes a support unit, heating unit with a laser irradiator, and a movement module to precisely control the irradiation of laser light on substrates, minimizing movement strokes and reducing the size of the heating unit to enhance spatial utility and uniformity of pattern line widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching is performed to make the line widths of the monitoring pattern and the anchor pattern the same, then the line width uniformity is improved, but over-etching occurs causing excessive removal of material
Solution Approach 1:
The patent introduces a pre-etching process that selectively etches the anchor pattern before the main etching step. This preliminary action creates a size difference between the anchor pattern and monitoring pattern, allowing the main etching to stop at the desired line width without over-etching the monitoring pattern. The pre-etched anchor pattern serves as a sacrificial reference that absorbs the excess etching that would otherwise damage the critical monitoring patterns.
Solution Approach 2:
The patent applies different etching conditions to different patterns on the substrate. The anchor pattern undergoes pre-etching with specific parameters, while the monitoring pattern is protected from this preliminary etching. This localized differentiation allows each pattern to receive the appropriate etching treatment, ensuring uniform final line widths without compromising the monitoring pattern integrity.
2Manufacturing precision
If the anchor pattern is additionally etched to correct line width deviations, then the line width precision is improved, but the etching process time increases
Solution Approach 1:
The patent performs the line width correction through a pre-etching step rather than requiring additional post-etching processes. By correcting the anchor pattern line width before the main etching sequence, the patent eliminates the need for repeated etching cycles and subsequent inspections, thereby reducing total process time while maintaining high precision.
Solution Approach 2:
The patent integrates the line width correction into the continuous etching process flow rather than treating it as a separate corrective step. The pre-etching of the anchor pattern is seamlessly followed by the main etching process, maintaining continuous useful action and avoiding interruptions or additional process cycles that would increase overall processing time.
3Measurement precision
If multiple patterns are inspected to ensure quality, then the inspection precision is improved, but the inspection time increases
Solution Approach 1:
The patent extracts the quality assessment function from multiple pattern inspections to a single anchor pattern inspection. By concentrating all critical quality information into the anchor pattern, the patent allows inspectors to evaluate the entire batch quality by examining only the anchor pattern, thereby maintaining high inspection precision while dramatically reducing inspection time.
Solution Approach 2:
The anchor pattern serves as a representative copy or proxy for the entire pattern set. The anchor pattern is designed to replicate the critical characteristics and potential defects that would appear in other patterns, allowing a single inspection to infer the quality status of multiple patterns without requiring individual inspection of each one.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus efficiently treats substrates by ensuring uniform line widths of patterns, reducing over-etching, and optimizing the etching process, thereby enhancing the precision and efficiency of semiconductor manufacturing.
Implementation Method 1
a heating unit including a laser irradiator that irradiates laser light in a pattern formed in the substrate
Data Source
AI summary
Disclosed is a substrate treating apparatus including a support unit that supports and rotates a substrate, a heating unit including a laser irradiator that irradiates laser light in a pattern formed in the substrate, a movement module that changes a location of the laser irradiator by moving the heating unit, and a controller that controls the support unit and the heating unit, the movement module moves the heating unit between a heating location, at which the laser light is irradiated to the substrate, and a standby location that deviates from the substrate, and the movement module rotates and linearly moves the heating unit.


