Semiconductor Laser Substrate Transfer for Cleavage-Free End Surfaces
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Solution Overview
Problem
Existing methods for manufacturing semiconductor laser devices face challenges in achieving high manufacturing yield and precise formation of end surfaces, particularly due to the need for precise alignment and cleavage of substrates.
Innovation Solution
The method involves preparing a semiconductor substrate with stripe-shaped semiconductor parts, dividing these structures to expose end surfaces parallel to the lateral direction, transferring individual bodies to a second substrate, and dividing the substrate to form element substrates with desired end surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If substrate alignment and cleavage is performed in existing methods, then laser element separation is achieved, but manufacturing yield decreases due to cleavage failure risk
Solution Approach 1:
The invention divides the laser element structure into individual bodies that are already separated by growth recesses during crystal growth. This segmentation occurs at the source (growth substrate) rather than requiring post-growth cleavage, eliminating the alignment and cleavage steps that cause manufacturing failures.
Solution Approach 2:
The individual bodies are pre-formed with exposed end surfaces during the crystal growth process itself. The growth recesses are created beforehand, so that when individual bodies are transferred to the second substrate, no additional cleavage or alignment operations are needed, significantly simplifying the manufacturing process.
2Manufacturing precision
If precise alignment is performed for substrate bonding, then element structure is formed, but manufacturing complexity increases
Solution Approach 1:
The end surfaces are pre-exposed during crystal growth by forming growth recesses around each semiconductor part. This preliminary action creates the desired end surface geometry before transfer, eliminating the need for precise alignment operations during substrate bonding.
Solution Approach 2:
The crystal growth process itself creates the individual bodies with exposed end surfaces through the formation of growth recesses. The structure serves its own purpose of defining the end surfaces, eliminating the need for separate alignment and processing steps.
3Productivity
If element structure wafer is bonded to support substrate, then laser elements are obtained, but process complexity increases
Solution Approach 1:
The laser element structures are pre-segmented into individual bodies during crystal growth using growth recesses. This segmentation is performed before bonding, so that the bonding process simply transfers already-separated individual bodies to the second substrate, eliminating the need for post-bonding division operations.
Solution Approach 2:
The individual bodies are prepared in advance with exposed end surfaces through growth recess formation. This preliminary preparation simplifies the bonding process to a simple transfer operation, improving productivity while reducing process complexity.
Data Source
AI summary
A method includes preparing a semiconductor substrate including a first substrate and a plurality of semiconductor parts having a stripe shape and obtained by crystal growth on the first substrate, dividing each of a plurality of structures including a respective one of the plurality of semiconductor parts on the first substrate in a manner that an end surface parallel to a lateral direction is exposed at each structure and thus obtaining an individual body group, transferring a plurality of individual bodies included in the individual body group to a second substrate, and dividing the second substrate and thus obtaining each of a plurality of element substrates including a respective one or more of the plurality of individual bodies.