Semiconductor Laser Temperature Control for Green Laser Modules

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Solution Overview

Problem

Current green laser modules using second harmonic generation (SHG) face challenges in achieving low power consumption and high wall-plug efficiency due to thermal crosstalk and temperature-dependent wavelength mismatches between semiconductor lasers and SHG elements, leading to waveform distortions and degraded output characteristics.

Innovation Solution

A light emitting device with a semiconductor laser, a first heater for temperature control, a gain unit, a second heater for the gain unit, and a second harmonic generation element, along with a temperature monitor to adjust drive signals for the heaters to match oscillation wavelengths and compensate temperature changes, ensuring optimal wavelength alignment and reduced thermal interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a thermoelectric cooler (TEC) is used for wavelength control, then the oscillation wavelength can be precisely controlled to match the QPM wavelength, but the power consumption increases to several watts

Engineering Contradiction:
Improvewavelength control precisionVSAvoidpower consumption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The patent changes the temperature control approach by replacing the TEC with simple heaters that provide thermal compensation. The heaters adjust the temperature of the semiconductor laser to compensate for wavelength drift caused by temperature changes, achieving wavelength control without the high power consumption of TEC devices.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent extracts and removes the TEC component from the system, eliminating the high power consumption source. Instead of using active cooling, the system relies on passive thermal management with heaters that only compensate for temperature drift when needed, significantly reducing overall power consumption.

Inventive Principle:
Principle #2Taking out (Extraction)

2Power

If the drive current of the semiconductor laser is modulated to control output intensity, then the output intensity can be adjusted, but the oscillation wavelength drifts from the QPM wavelength

Engineering Contradiction:
Improveoutput intensityVSAvoidwavelength stability
Core Design Contradiction:
PowerVSMeasurement precision

Solution Approach 1:

The patent implements a feedback control system where the temperature of the semiconductor laser is continuously monitored and adjusted using heaters. This feedback mechanism compensates for wavelength drift that occurs during intensity modulation, maintaining wavelength stability while allowing output intensity to be controlled through drive current modulation.

Inventive Principle:
Principle #23Feedback

3Stability of the object's composition

If the MOPA structure with SOA is used to suppress wavelength fluctuation, then the oscillation wavelength stability is improved, but thermal crosstalk between the DFB laser and SOA causes waveform distortions

Engineering Contradiction:
Improvewavelength stabilityVSAvoidwaveform distortion
Core Design Contradiction:
Stability of the object's compositionVSObject-generated harmful factors

Solution Approach 1:

The patent segments the thermal management of the DFB laser and SOA by providing separate heater control for each component. This allows independent temperature adjustment of the DFB laser to optimize its wavelength stability without being affected by thermal crosstalk from the SOA, thereby preventing waveform distortions while maintaining wavelength stability.

Inventive Principle:
Principle #1Segmentation

4Reliability

If the detuning between oscillation wavelength and gain peak wavelength is optimized for high temperature operation, then the output characteristics are improved at high temperature, but the detuning becomes too large at low temperature causing Fabry-Perot modes to oscillate

Engineering Contradiction:
Improveoutput characteristicsVSAvoidtemperature adaptability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent makes the temperature compensation dynamic by using heaters that can actively adjust the DFB laser temperature based on operating conditions. This dynamic adjustment allows the system to optimize the detuning for high-temperature operation while preventing excessive detuning at low temperatures, thereby maintaining reliable output characteristics across a wide temperature range and preventing Fabry-Perot mode oscillation.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively suppresses waveform distortions and maintains optimal output characteristics across varying environmental temperatures, improving wall-plug efficiency and reducing power consumption by precise temperature control of the semiconductor laser and gain unit.

Implementation Method 1

a first heater, which controls a temperature of the semiconductor laser, provided near the semiconductor laser

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

a second heater, which controls a temperature of the gain unit, provided near the gain unit

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 3

a second harmonic generation element, which converts the amplified beam outputted from the gain unit to a second harmonic light and outputs the second harmonic light

Methodology Applied
Scientific EffectSecond harmonic generation: Second Harmonic Generation

Data Source

PatentUS8654803B2Light emitting device and method of controlling light emitting device
Publication Date: 2014.02.18 FUJITSU LTD
  • US8654803B2 patent drawing
  • US8654803B2 patent drawing
  • US8654803B2 patent drawing

AI summary

A light emitting device includes a semiconductor laser, which oscillates in a single longitudinal mode, formed above a semiconductor substrate, a first heater, which controls a temperature of the semiconductor laser, provided near the semiconductor laser, a gain unit, which amplifies a beam outputted from the semiconductor laser and outputs an amplified beam, formed above the semiconductor substrate, a second heater, which controls a temperature of the gain unit, provided near the gain unit, and a second harmonic generation element, which converts the amplified beam outputted from the gain unit to a second harmonic light and outputs the second harmonic light.