Laser Textured Photovoltaic Semiconductor Devices
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Solution Overview
Problem
Traditional methods for making photovoltaic semiconductor devices involve suboptimal processing steps that result in non-uniform surface textures and inefficient electromagnetic radiation absorption, leading to reduced device quality and performance.
Innovation Solution
The method involves applying a damage removal etch to create a smooth surface and using laser radiation to texture and dope the semiconductor material, allowing for precise control over surface features and dopant localization, thereby enhancing electromagnetic radiation absorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional processing steps are used to texture the semiconductor surface, then surface texturing is achieved, but the surface texture becomes non-uniform and electromagnetic radiation absorption efficiency decreases
Solution Approach 1:
The patent replaces traditional mechanical or chemical texturing methods with laser radiation processing. The laser creates uniform surface features through controlled irradiation, eliminating the non-uniformity associated with conventional processing while enhancing electromagnetic radiation absorption through precisely controlled surface morphology.
Solution Approach 2:
The patent utilizes controlled laser radiation parameters (wavelength, intensity, pulse duration) to create optimal surface features. By adjusting these parameters, uniform surface texturing is achieved that maximizes electromagnetic radiation absorption, resolving the contradiction between manufacturing precision and absorption efficiency.
2Reliability
If multiple processing steps including oxide removal and antireflective coating are applied, then device quality is improved, but processing time increases
Solution Approach 1:
The patent combines multiple functions into the laser processing step. The laser radiation simultaneously performs surface texturing, doping, and antireflective coating functions in a single operation, eliminating the need for separate oxide removal and coating steps while maintaining device quality.
Solution Approach 2:
The laser processing system is designed to perform multiple functions: surface texturing for light trapping, dopant incorporation for electrical properties, and antireflective coating formation. This multi-functional approach reduces processing time while maintaining comprehensive device quality improvement.
3Productivity
If laser radiation is used to texture and dope the semiconductor material, then electromagnetic radiation absorption is enhanced, but processing complexity increases
Solution Approach 1:
The patent applies laser radiation with localized control to create specific surface features and dopant distributions where needed. This localized processing enhances electromagnetic radiation absorption in critical regions without requiring complex overall processing schemes, maintaining simplicity while achieving high efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in higher quality semiconductor devices with improved crystalline defect gettering, increased efficiency, and reduced processing time, allowing for the elimination of unnecessary steps like oxide removal and antireflective coating, leading to better light absorption and device performance.
Implementation Method 1
texturing further includes irradiating a target region of the semiconductor material with laser radiation
Implementation Method 2
exposing the laser radiation to a dopant such that the irradiation incorporates the dopant into the semiconductor material
Implementation Method 3
The quality of the semiconductor device can be improved by annealing the semiconductor material and/or the textured region
Implementation Method 4
the dopant can be activated at a temperature of greater than about 700° C.
Implementation Method 5
applying a damage removal etch (DRE) to a semiconductor material to create at least one surface having a root mean square (RMS) surface roughness
Implementation Method 6
Photovoltaic semiconductor devices and associated methods
Implementation Method 7
enhanced electromagnetic radiation absorption
Data Source
AI summary
Photovoltaic semiconductor devices and associated methods are provided. In one aspect, for example, a method of making a photovoltaic semiconductor device having enhanced electromagnetic radiation absorption can include applying a damage removal etch (DRE) to a semiconductor material to an RMS surface roughness of from about 0.5 nm to about 50 nm and texturing a single side of the semiconductor material. The texturing further includes irradiating a target region of the semiconductor material with laser radiation to create features having a size of from about 50 nm to about 10 microns.