Laser Textured Semiconductor Substrate Damage Removal
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Solution Overview
Problem
Silicon-based semiconductor photodetecting devices require thick layers for sufficient optical absorption due to their indirect bandgap, leading to increased material thickness and potential defects from laser texturing processes, which can lower minority-carrier lifetime and majority-carrier mobility, resulting in reduced open-circuit voltage and quantum efficiency.
Innovation Solution
A semiconductor optoelectronic device with a laser processed region that has undergone damage removal, maintaining surface topology and doping levels, allowing for increased open-circuit voltage and improved carrier mobility, while reducing defects caused by laser texturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thick semiconductor layers are used to achieve sufficient optical absorption, then optical absorption efficiency is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent applies laser texturing to create curved, non-planar surfaces on the semiconductor device. This curvature increases the effective optical path length and light-trapping capability, enabling sufficient optical absorption in thinner layers without requiring increased physical thickness
Solution Approach 2:
The patent modifies surface parameters through laser processing, creating textured surfaces with specific roughness and geometric features that enhance light interaction. This changes the optical parameters of the device, improving absorption efficiency without increasing layer thickness
2Reliability
If laser texturing is applied to enhance light interaction, then optical absorption is improved, but substrate damage and defects increase
Solution Approach 1:
The patent applies laser texturing selectively to specific regions of the semiconductor device rather than uniformly across the entire substrate. This localized approach enhances light interaction where needed while minimizing substrate damage and preserving material quality in other regions
Solution Approach 2:
The patent uses controlled laser processing parameters to apply just enough texturing to achieve the desired optical effect without excessive energy input that would cause substrate damage. The treatment is optimized to be sufficient but not excessive
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the interaction efficiency with electromagnetic radiation, increasing open-circuit voltage to 500-800 mV and maintaining surface topology, thereby improving quantum efficiency and reducing defects, allowing for thinner semiconductor materials with comparable performance to bulk devices.
Implementation Method 1
a laser processed region associated with the junction and configured to interact with electromagnetic radiation
Data Source
AI summary
Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.