Semiconductor Film Laser Timing Control for Faster Crystal Growth
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Solution Overview
Problem
The existing laser processing apparatus for semiconductor films requires a long processing time due to the need for the semiconductor film to cool down to normal temperature between each laser beam irradiation, leading to increased throughput and inefficiency.
Innovation Solution
A laser processing apparatus equipped with a film state measuring instrument and a laser light adjusting mechanism that allows for adjusted timing and intensity of subsequent laser beam irradiation based on the measured state of the semiconductor film, enabling irradiation at a temperature above the freezing point but below the melting point, thereby reducing waiting times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the semiconductor film is cooled to normal temperature between each laser beam irradiation, then the crystalline quality is improved through controlled melting and solidification, but the processing time increases and throughput decreases
Solution Approach 1:
The patent changes the temperature parameter control strategy by eliminating the requirement to cool to normal temperature between irradiations. Instead, it maintains the film temperature above the freezing point and below the melting point, allowing continuous processing while preserving crystal growth quality through controlled thermal conditions.
Solution Approach 2:
The patent enables continuous laser beam irradiation without interruption for cooling to normal temperature. The useful action of laser irradiation for crystal growth continues uninterrupted, with only brief intervals needed to prevent exceeding the melting point, thereby significantly improving throughput while maintaining crystalline quality.
2Productivity
If the semiconductor film temperature is maintained above freezing point and below melting point during subsequent irradiations, then the processing time is reduced and throughput is improved, but the risk of uncontrolled melting increases
Solution Approach 1:
The patent employs a film state measuring instrument that provides real-time feedback on the semiconductor film's temperature and crystalline state. This feedback enables the laser light adjusting mechanism to dynamically control the timing and intensity of subsequent laser irradiations, ensuring the temperature remains within the safe range above freezing and below melting points, thereby maintaining process reliability while improving throughput.
3Productivity
If the laser beam intensity and timing are adjusted based on measured film state, then the processing efficiency is improved, but the system complexity increases
Solution Approach 1:
The patent integrates multiple functions into a coordinated system: the film state measuring instrument not only measures temperature but also provides data for timing control; the laser light adjusting mechanism performs both intensity adjustment and timing control based on the same measurement system. This multi-functional integration improves processing efficiency while minimizing the addition of separate independent systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the processing time per semiconductor film and improves throughput by allowing subsequent laser beam irradiations at a temperature above the freezing point, enhancing energy efficiency and crystalline quality.
Implementation Method 1
the temperature of the part of the semiconductor film where it is irradiated with the laser beam is raised from a normal temperature to near the melting temperature (melting point)
Implementation Method 2
The crystals of the semiconductor film grow gradually by repeating melting and solidification
Implementation Method 3
a film state measuring instrument configured to measure a state of the semiconductor film after the semiconductor film is irradiated with the laser beam
Data Source
AI summary
A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus (1) according to an embodiment includes a laser light source (2) configured to irradiate a semiconductor film (M1) with a laser beam, a film state measuring instrument (5) configured to measure a state of the semiconductor film after the semiconductor film (M1) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M1) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M1) measured by the film state measuring instrument (5).